LexDanaLexDanabeta
Inventor

Youichi Tobita

Inventor
Hyogo, JP

Overview

111→
Patents
1983–2020
Patent span
Physics
Primary field (CPC G)

Patents· 111 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores34%
G09GArrangements or circuits for control of indicating devices using static means to present variable information22%
H03KPulse technique14%
G05FSystems for regulating electric or magnetic variables8%
H10DInorganic electric semiconductor devices4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H10BElectronic memory devices2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
G06FElectric digital data processing2%
H03HImpedance networks, e.g. resonant circuits2%
PatentTitleYear
10,762,865Scanning-line drive circuit20209,336,897'Shift register circuit'20169,280,942'Electro-optical device, shift register circuit, and semiconductor device'20169,147,370'Image display apparatus'20158,913,709'Shift register circuit'20148,816,949'Shift register circuit and image display comprising the same'20148,654,057'Electro-optical device, shift register circuit, and semiconductor device'20148,615,066'Shift register circuit'20138,593,204'Amplitude conversion circuit'20138,571,170'Shift register circuit'20138,571,169'Scanning line driving circuit'20138,493,309'Shift register circuit and image display comprising the same'20138,462,098'Electro-optical device, shift register circuit, and semiconductor device'20138,379,790'Shift register circuit'20138,300,761'Shift register circuit'20128,194,817'Shift register circuit'20128,175,216'Shift register circuit'20128,149,986'Shift register circuit'20128,040,999'Shift register circuit'20118,023,610'Semiconductor device and shift register circuit'20117,893,732'Driver circuit'20117,831,010'Shift register circuit'20107,825,888'Shift register circuit and image display apparatus containing the same'20107,738,623'Shift register circuit and image display apparatus containing the same'20107,688,298'Digital/analog conversion device and display device having the same'20107,664,218'Shift register and image display apparatus containing the same'20107,636,412'Shift register circuit and image display apparatus equipped with the same'20097,627,076'Shift register circuit and image display apparatus having the same'20097,573,451'Sample hold circuit and image display device using the same'20097,504,869'Frequency dividing circuit, power supply circuit and display device'20097,499,518'Shift register and image display apparatus containing the same'20097,492,853'Shift register and image display apparatus containing the same'20097,443,944'Shift register, image display apparatus containing the same and signal generation circuit'20087,436,923'Shift register circuit and image display apparatus containing the same'20087,403,586'Shift register and image display apparatus containing the same'20087,375,710'Image display apparatus having gradation potential generating circuit'20087,372,300'Shift register and image display apparatus containing the same'20087,365,591'Voltage generating circuit'20087,362,318'Display apparatus provided with decode circuit for gray-scale expression'20087,324,079'Image display apparatus'20087,317,441'Constant current circuit, drive circuit and image display device'20087,289,593'Shift register and image display apparatus containing the same'20077,285,797'Image display apparatus without occurence of nonuniform display'20077,236,152'Digital/analog conversion device and display device having the same'20077,212,183'Liquid crystal display apparatus having pixels with low leakage current'20077,187,373'Display apparatus'20077,145,543'Image display unit'20067,138,831'Level conversion circuit and serial/parallel conversion circuit with level conversion function'20067,034,571'Level converting circuit efficiently increasing an amplitude of a small-amplitude signal'20067,030,682'Voltage detection circuit and internal voltage generating circuit comprising it'20067,006,067'Display device'20067,005,838'Voltage generation circuit'20066,980,194'Amplitude conversion circuit for converting signal amplitude'20056,975,168'Drive circuit'20056,930,529'OFFSET COMPENSATION CIRCUIT COMPENSATING FOR OFFSET VOLTAGE OF DRIVE CIRCUIT AS WELL AS DRIVE CIRCUIT WITH OFFSET-COMPENSATION CAPABILITY AND LIQUID-CRYSTAL DISPLAY DEVICE USING THE OFFSET COMPENSATION CIRCUIT'20056,919,743'Drive circuit with low current consumption'20056,861,889'Amplitude converting circuit'20056,630,627'Multilayered wiring substrate with dummy wirings in parallel to signal wirings and with'20036,388,886'Semiconductor memory module and module system'20026,388,934'Semiconductor memory device operating at high speed with low current consumption'20026,377,499'Refresh-free semiconductor memory device'20026,344,771'Step-down power-supply circuit'20026,222,223'Semiconductor device including capacitance element having high area efficiency'20016,111,449'Clamping circuit for absorbing ringing of signal'20006,087,885'Semiconductor device allowing fast and stable transmission of signals'20006,087,813'Internal voltage generation circuit capable of stably generating internal voltage with low power consumption'20006,052,324'Semiconductor memory device capable of fast sensing operation'20006,043,638'Reference voltage generating circuit capable of generating stable reference voltage independent of operating environment'20006,034,391'Semiconductor device including capacitance element having high area efficiency'20005,986,915'Semiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select line'19995,900,665'Semiconductor integrated circuit device operating at high speed with low current consumption'19995,835,419'Semiconductor memory device with clamping circuit for preventing malfunction'19985,825,694'Semiconductor memory device capable of preventing malfunction due to disconnection of column select line or word select line'19985,815,446'Potential generation circuit'19985,812,015'Boosting pulse generation circuit for a semiconductor integrated circuit'19985,805,508'Semiconductor memory device with reduced leak current'19985,801,412'Semiconductor device having a capacitance element with excellent area efficiency'19985,757,225'Voltage generation circuit that can stably generate intermediate potential independent of threshold voltage'19985,726,941'Semiconductor integrated circuit'19985,717,324'Intermediate potential generation circuit'19985,548,596'Semiconductor memory device with read out data transmission bus for simultaneously testing a plurality of memory cells and testing method thereof'19965,523,977'Testing semiconductor memory device having test circuit'19965,418,747'Dynamic random access memory having a plurality of rated voltages as operation supply voltage and operating method thereof'19955,404,335'Dynamic type semiconductor memory device operable in a self-refreshing mode'1995RE034718'DRAM with reduced-test-time-mode'19945,315,550'Dynamic random access memory having sense amplifier activation delayed based on operation supply voltage and operating method thereof'19945,276,649'Dynamic-type semiconductor memory device having staggered activation of column groups'19945,267,200'Semiconductor memory device and operating method thereof with transfer transistor used as a holding means'19935,132,932'Dynamic random access memory having a plurality of rated voltages as operation supply voltage and operating method thereof'19925,115,412'Data read circuit of semiconductor memory device and method of reading data out'19925,079,744'Test apparatus for static-type semiconductor memory devices'19925,065,091'Semiconductor integrated circuit device testing'19915,023,840'Semiconductor memory device having testing function and testing method thereof'19914,989,183'Semiconductor memory device improved for externally designating operation mode'19914,984,210'Semiconductor memory device improved for externally designating operation mode'19914,980,799'Electrostatic capacity device in semiconductor memory device, and apparatus for and method of driving sense amplifier using electrostatic capacity device'19904,961,007'Substrate bias potential generator of a semiconductor integrated circuit device and a generating method therefor'19904,951,256'Apparatus and method for driving sense amplifier in dynamic random access memory'19904,860,259'Dram with reduced-test-time mode'19894,833,656'Fast access circuit for dynamic type semiconductor memory device'19894,806,788'Semiconductor integrated circuit with decreased burn-in time'19894,802,123'Semiconductor integrated circuit device'19894,792,928'Semiconductor memory circuit with control of bit line voltage balancing'19884,788,664'Word line drive circuit'19884,742,250'Inner Potential generating circuit'19884,737,902'Inner potential generating circuit'19884,695,746'Substrate potential generating circuit'19874,571,509'Output circuit having decreased interference between output terminals'19864,571,503'Supply voltage level independent clock generator'19864,513,399'Semiconductor memory'19854,398,100'Booster circuit'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–2020Patents assigned to MITSUBISHI ELECTRIC CORP (111)· patent assignee history
1983–1994Based in Itami, JP· patent location history
1985–2010Based in Hyogo, JP· patent location history
1998–2020Based in Tokyo, JP· patent location history
2012–2016Patents assigned to TOBITA YOUICHI (12)· patent assignee history
2012–2016Patents assigned to MIYAYAMA TAKASHI (2)· patent assignee history
2012–2016Patents assigned to MORI SEIICHIRO (2)· patent assignee history
2012–2016Patents assigned to NOJIRI ISAO (2)· patent assignee history
2015Based in Toykyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP1111983–2020
TOBITA YOUICHIself122012–2016
MIYAYAMA TAKASHI22012–2016
MORI SEIICHIRO22012–2016
NOJIRI ISAO22012–2016
Locations
LocationPatentsSpan
Hyogo, JP631985–2010
Tokyo, JP411998–2020
Itami, JP61983–1994
Toykyo, JP12015