Inventor
Shih-Yen Lin
Inventor
New Taipei, TW
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
C01BNon-metallic elements7%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
B82YSpecific uses or applications of nanostructures2%
C01GCompounds containing metals not covered by subclasses c01d or c01f2%
B25HWorkshop equipment, e.g. for marking-out work1%
C30BSingle-crystal growth1%
PatentTitleYear
10,879,140System and method for bonding package lid202010,872,973Semiconductor structures with two-dimensional materials202010,867,835Semiconductor packaging structure and process202010,784,3512D crystal hetero-structures and manufacturing methods thereof202010,636,652Method of forming a semiconductor device using layered etching and repairing of damaged portions202010,541,132Forming semiconductor structures with two-dimensional materials202010,505,052Semiconductor device with transition metal dichalocogenide hetero-structure201910,403,744Semiconductor devices comprising 2D-materials and methods of manufacture thereof201910,269,902Semiconductor device and method of formation201910,269,668System and method for bonding package lid201910,269,564Method of forming a semiconductor device using layered etching and repairing of damaged portions201910,164,122Semiconductor device with transition metal dichalocogenide hetero-structure201810,157,772Semiconductor packaging structure and process201810,157,737Semiconductor devices comprising 2D-materials and methods of manufacture thereof201810,147,603Method of manufacturing a FET using a two dimensional transition metal dichalcogenide including a low power oxygen plasma treatment20189,899,537'Semiconductor device with transition metal dichalocogenide hetero-structure'20189,893,043'Method of manufacturing a chip package'20189,859,115'Semiconductor devices comprising 2D-materials and methods of manufacture thereof'20189,853,105Semiconductor device and method of formation20179,805,997'Packaging methods for semiconductor devices with encapsulant ring'20179,786,520'Semiconductor device and manufacturing method thereof'20179,735,043'Semiconductor packaging structure and process'20179,673,119'System and method for bonding package lid'20179,577,049'Semiconductor device structure and method for forming the same'20179,525,072'Semiconductor device and method of formation'20169,415,501'Apparatus for manufacturing a semiconductor device and method of manufacturing a semiconductor device'20169,287,233'Adhesive pattern for advance package reliability improvement'20169,209,046'Semiconductor device and manufacturing method thereof'20159,142,523'Semiconductor device and manufacturing method thereof'20159,029,190'Method for manufacturing graphene film and graphene channel of transistor'20157,560,728'Vertical organic transistor and method of fabricating the same'20096,909,108'Structure of quantum dot light emitting diode and method of fabricating the same'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005Patents assigned to CHUNG SHAN INST OF SCIENCE (1)· patent assignee history
2005–2019Based in Hsinchu, TW· patent location history
2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2015Patents assigned to ACADEMIA SINICA (1)· patent assignee history
2015–2020Based in New Taipei, TW· patent location history
2015Based in Taipei, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (27)· patent assignee history
2016–2020Patents assigned to UNIV NAT TAIWAN (16)· patent assignee history
2017–2020Based in Tainan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 27 | 2016–2020 |
| UNIV NAT TAIWAN | 16 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG | 2 | 2015 |
| ACADEMIA SINICA | 1 | 2015 |
| CHUNG SHAN INST OF SCIENCE | 1 | 2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Taipei, TW | 13 | 2015–2020 |
| Hsinchu, TW | 10 | 2005–2019 |
| Tainan, TW | 8 | 2017–2020 |
| Taipei, TW | 1 | 2015 |