Inventor
Tomokazu Kozakai
Inventor
Tokyo, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps50%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices10%
B82YSpecific uses or applications of nanostructures8%
G01NInvestigating or analysing materials by determining their chemical or physical properties8%
G21KHandling of particles or ionising radiation not otherwise provided for8%
G01QScanning-probe techniques or apparatus5%
G06TImage data processing or generation, in general5%
B23KSoldering or unsoldering3%
C23CCoating metallic material3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
11,081,312Method of manufacturing emitter, emitter, and focused ion beam apparatus202110,276,343Method for acquiring image and ion beam apparatus201910,014,157Method for acquiring image and ion beam apparatus20189,793,085'Focused ion beam apparatus'20179,793,092'Charged particle beam apparatus and processing method'20179,773,634'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,583,299'Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus'20179,378,858'Repair apparatus'20169,336,979'Focused ion beam apparatus with precious metal emitter surface'20169,245,712'Focused ion beam system'20168,999,178'Method for fabricating emitter'20158,963,100'Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa'20158,890,093'Charged particle beam apparatus and method for forming observation image'20148,764,994'Method for fabricating emitter'20147,927,769'Method for fabricating EUVL mask'20117,750,318'Working method by focused ion beam and focused ion beam working apparatus'20107,576,340'Focused ion beam processing method'20097,488,961'Charged particle beam irradiation method and charged particle beam apparatus'20097,485,880'Charged particle beam scan and irradiation method, charged particle beam apparatus, workpiece observation method and workpiece processing method'20097,323,685'Ion beam processing method'20086,780,551'Charged particle processing for forming pattern boundaries at a uniform thickness'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2011Patents assigned to SII NANOTECHNOLOGY INC (7)· patent assignee history
2004–2015Based in Chiba, JP· patent location history
2014–2021Patents assigned to HITACHI HIGH TECH SCIENCE CORP (10)· patent assignee history
2014–2021Based in Tokyo, JP· patent location history
2015Patents assigned to ARAMAKI FUMIO (1)· patent assignee history
2015Patents assigned to KOZAKAI TOMOKAZU (1)· patent assignee history
2017Patents assigned to HITACHI HIGH-TECH SCIENCE CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI HIGH TECH SCIENCE CORP | 10 | 2014–2021 |
| SII NANOTECHNOLOGY INC | 7 | 2004–2011 |
| HITACHI HIGH-TECH SCIENCE CORP | 4 | 2017 |
| ARAMAKI FUMIO | 1 | 2015 |
| KOZAKAI TOMOKAZUself | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 13 | 2014–2021 |
| Chiba, JP | 8 | 2004–2015 |