Inventor
OLEG GLUSCHENKOV
Inventor
US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10NElectric solid-state devices not otherwise provided for12%
B82YSpecific uses or applications of nanostructures9%
H10BElectronic memory devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G11CStatic stores4%
G06NComputing arrangements based on specific computational models2%
PatentTitleYear
12,568,661Self-aligned backside trench epitaxy for low contact resistivity202612,482,742Enhanced linerless vias202512,463,132Semiconductor structure with backside metallization layers202512,412,829Method and structure of forming sidewall contact for stacked FET202512,402,408Stacked FETS including devices with thick gate oxide202512,402,391Stressed material within gate cut region202512,347,767Stacked FET contact formation202512,342,732Vertical silicon Josephson Junction device for qubit applications202512,328,916CPP-agnostic source-drain contact formation for gate-all-around devices with dielectric isolation202512,310,263Phase change memory gaps202512,176,404Wrap-around contact for nanosheet device202412,144,270Back end of line embedded RRAM structure with grain growth enhancement202412,144,271Back end of line embedded RRAM structure with low forming voltage202412,100,766Integrated short channel omega gate FinFET and long channel FinFET202412,035,641Josephson junction device fabricated by direct write ion implantation202411,957,069Contact resistance of a metal liner in a phase change memory cell202411,715,783Uniform horizontal spacer202311,711,982Laser anneal for MRAM encapsulation enhancement202311,621,297Stackable symmetrical operation memory bit cell structure with bidirectional selectors202311,562,906Low resistance source drain contact formation with trench metastable alloys and laser annealing202311,322,588Contact source/drain resistance202211,309,216Large grain copper interconnect lines for MRAM202211,227,922Sloped epitaxy buried contact202211,201,061Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure202111,145,380Analog nonvolatile memory cells using dopant activation202111,139,215Hybrid gate stack integration for stacked vertical transport field-effect transistors2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to IBM (26)· patent assignee history
2021–2026Based in US· patent location history
2023Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 26 | 2021–2026 |
| GLOBALFOUNDRIES INC | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 26 | 2021–2026 |