Inventor

Atsuki Fukazawa

Inventor

Tama, JP

Overview

2001–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%

C23CCoating metallic material25%

H01LSemiconductor devices16%

H10DInorganic electric semiconductor devices8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H01JElectric discharge tubes or discharge lamps7%

B05DProcesses for applying fluent materials to surfaces, in general2%

C09DCoating compositions, e.g. paints, varnishes or lacquers2%

H05HPlasma technique1%

H10BElectronic memory devices1%

PatentTitleYear

11,127,589Method of topology-selective film formation of silicon oxide2021 11,069,522Si precursors for deposition of SiN at low temperatures2021 11,056,345Method for manufacturing semiconductor device2021 10,847,365Method of forming conformal silicon carbide film by cyclic CVD2020 10,784,105Methods for forming doped silicon oxide thin films2020 10,755,922Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition2020 10,720,322Method for forming silicon nitride film selectively on top surface2020 10,655,221Method for depositing oxide film by thermal ALD and PEALD2020 10,529,554Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches2020 10,510,530Methods for forming doped silicon oxide thin films2019 10,468,251Method for forming spacers using silicon nitride film for spacer-defined multiple patterning2019 10,435,790Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap2019 10,395,919Method and apparatus for filling a gap2019 10,395,917Si precursors for deposition of SiN at low temperatures2019 10,262,865Methods for manufacturing semiconductor devices2019 10,186,420Formation of silicon-containing thin films2019 10,179,947Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition2019 10,147,600Methods for forming doped silicon oxide thin films2018 9,905,416'Si precursors for deposition of SiN at low temperatures'2018 9,875,893Methods for forming doped silicon oxide thin films2018 9,818,601'Substrate processing apparatus and method of processing substrate'2017 9,812,319'Method for forming film filled in trench without seam or void'2017 9,754,779'Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches'2017 9,627,221'Continuous process incorporating atomic layer etching'2017 9,564,314'Methods for forming doped silicon oxide thin films'2017 9,564,309'Si precursors for deposition of SiN at low temperatures'2017 9,455,138'Method for forming dielectric film in trenches by PEALD using H-containing gas'2016 9,396,956'Method of plasma-enhanced atomic layer etching'2016 9,368,352'Methods for forming doped silicon oxide thin films'2016 9,343,297'Method for forming multi-element thin film constituted by at least five elements by PEALD'2016 9,153,441'Methods for forming doped silicon oxide thin films'2015 9,142,393'Method for cleaning reaction chamber using pre-cleaning process'2015 9,023,737'Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment'2015 8,912,101'Method for forming Si-containing film using two precursors by ALD'2014 8,784,951'Method for forming insulation film using non-halide precursor having four or more silicons'2014 8,784,950'Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group'2014 8,765,233'Method for forming low-carbon CVD film for filling trenches'2014 8,722,546'Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control'2014 8,679,958'Methods for forming doped silicon oxide thin films'2014 8,647,722'Method of forming insulation film using plasma treatment cycles'2014 8,563,443'Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen'2013 8,329,599'Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen'2012 8,241,991'Method for forming interconnect structure having airgap'2012 8,080,282'Method for forming silicon carbide film containing oxygen'2011 8,003,174'Method for forming dielectric film using siloxane-silazane mixture'2011 7,919,416'Method of forming conformal dielectric film having Si-N bonds by PECVD'2011 7,842,622'Method of forming highly conformal amorphous carbon layer'2010 7,825,040'Method for depositing flowable material using alkoxysilane or aminosilane precursor'2010 7,781,352'Method for forming inorganic silazane-based dielectric film'2010 7,718,553'Method for forming insulation film having high density'2010 7,655,577'Method of forming silicon-containing insulation film having low dielectric constant and low film stress'2010 7,651,959'Method for forming silazane-based dielectric film'2010 7,622,369'Device isolation technology on semiconductor substrate'2009 7,582,575'Method for forming insulation film'2009 7,560,144'Method of stabilizing film quality of low-dielectric constant film'2009 7,354,873'Method for forming insulation film'2008 7,229,935'Method of forming a thin film by plasma CVD of a silicon-containing source gas'2007 7,147,900'Method for forming silicon-containing insulation film having low dielectric constant treated with electron beam radiation'2006 7,148,154'Method of forming silicon-containing insulation film having low dielectric constant and low film stress'2006 7,064,088'Method for forming low-k hard film'2006 7,012,268'Gas-shield electron-beam gun for thin-film curing application'2006 6,881,683'Insulation film on semiconductor substrate and method for forming same'2005 6,852,650'Insulation film on semiconductor substrate and method for forming same'2005 6,818,570'Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength'2004 6,759,344'Method for forming low dielectric constant interlayer insulation film'2004 6,383,900'Method and apparatus for forming polycrystal silicon film'2002 6,242,278'Method for forming polycrystal silicon film for semiconductor elements'2001 6,211,077'Method for forming polycrystal silicon film for semiconductor elements'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2014Patents assigned to ASM JAPAN (30)· patent assignee history

2001–2021Based in Tama, JP· patent location history

2001Based in Nagayama Tama, JP· patent location history

2002Based in Chino, JP· patent location history

2005–2019Based in Tami, JP· patent location history

2010–2021Based in Tokyo, JP· patent location history

2011–2014Patents assigned to FUKAZAWA ATSUKI (8)· patent assignee history

2014–2021Patents assigned to ASM IP HOLDING BV (30)· patent assignee history

2014–2016Patents assigned to ASM INT (3)· patent assignee history

2017–2020Patents assigned to ASM INT NV (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM IP HOLDING BV	30	2014–2021
ASM JAPAN	30	2001–2014
FUKAZAWA ATSUKIself	8	2011–2014
ASM INT NV	5	2017–2020
ASM INT	3	2014–2016

Locations

Location	Patents	Span
Tama, JP	50	2001–2021
Tokyo, JP	14	2010–2021
Tami, JP	2	2005–2019
Chino, JP	1	2002
Nagayama Tama, JP	1	2001