Inventor
Kuo-Cheng Lee
Inventor
Tainan, TW
Overview
Patents· 87 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices39%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation39%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10DInorganic electric semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%
G02BOptical elements, systems or apparatus1%
G06FElectric digital data processing1%
PatentTitleYear
10,952,354Cold plate with metal tube connection and flexible metal tube202110,879,290Protection ring for image sensors202010,879,305Image sensor202010,872,921Image sensor and method for fabricating the image sensor202010,854,530Heat dissipation structures202010,818,719Semiconductor device with a radiation sensing region and method for forming the same202010,804,307Increased optical path for long wavelength light by grating structure202010,797,094Mechanisms for forming image sensor device202010,790,321CMOS image sensor having indented photodiode structure202010,777,592Image sensor and method for manufacturing thereof202010,770,501Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters202010,770,502Semiconductor image sensor device having back side illuminated image sensors with embedded color filters202010,763,289Light blocking layer for image sensor device202010,720,460High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof202010,714,523Isolation structure and image sensor202010,692,911Polarizers for image sensor devices202010,692,826Semiconductor structure and method for forming the same202010,651,217Structure and formation method of light sensing device202010,644,060Image sensor with high quantum efficiency surface structure202010,636,824High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof202010,629,765Single photon avalanche diode202010,566,361Wide channel gate structure and method of forming202010,553,631Color filter uniformity for image sensor devices202010,546,890Protection ring for image sensors202010,535,698Image sensor with pad structure202010,522,579Light blocking layer for image sensor device201910,522,580Structure and formation method of light-sensing device201910,504,952Increased optical path for long wavelength light by grating structure201910,498,947Image sensor including light shielding layer and patterned dielectric layer201910,490,590Semiconductor image sensor device having back side illuminated image sensors with embedded color filters201910,490,587CIS structure with complementary metal grid and deep trench isolation and method for manufacturing the same201910,483,310Isolation structure for reducing crosstalk between pixels and fabrication method thereof201910,475,839Semiconductor device with a radiation sensing region and method for forming the same201910,468,444Image sensor device and method for forming the same201910,367,020Polarizers for image sensor devices201910,304,885Color filter uniformity for image sensor devices201910,276,617Protection ring for image sensors201910,276,620Image sensor device and method for forming the same201910,269,845Mechanisms for forming image sensor device201910,269,844Structure and formation method of light sensing device201910,204,960Method of forming polysilicon gate structure in image sensor device201910,181,491Semiconductor image sensor device having back side illuminated image sensors with embedded color filters201910,177,185High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof201910,177,191Image sensor device and method for forming the same201910,163,966Image sensing device and manufacturing method thereof201810,157,949Isolation structure for reducing crosstalk between pixels and fabrication method thereof20189,991,307Stacked grid design for improved optical performance and isolation20189,978,790Image sensor and method for manufacturing thereof20189,917,132'CMOS image sensor structure with IR/NIR integration'20189,905,601'Protection ring for image sensors'20189,853,076Stacked grid for more uniform optical input20179,847,363Semiconductor device with a radiation sensing region and method for forming the same20179,825,085'Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer'20179,812,488'Backside illuminated image sensor and method of manufacturing the same'20179,806,116'Complementary metal grid and deep trench isolation in CIS application'20179,799,697'Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters'20179,786,704'CMOS image sensor structure with crosstalk improvement'20179,786,716'Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters'20179,768,214'Structure of dielectric grid for a semiconductor device'20179,761,622'CMOS image sensor structure with crosstalk improvement'20179,728,573'Backside illuminated image sensor and method of manufacturing the same'20179,722,099'Light sensing device with outgassing hole in a light shielding layer and an anti-reflection film'20179,711,560'CMOS image sensor structure with IR/NIR integration'20179,679,939'Backside illuminated image sensor device'20179,659,985'Integrated circuit and image sensing device having metal shielding layer and related fabricating method'20179,613,916'Protection ring for image sensors'20179,608,021'Image sensor and method for manufacturing thereof'20179,570,493'Dielectric grid bottom profile for light focusing'20179,559,135'Conduction layer for stacked CIS charging prevention'20179,553,118'Formation of buried color filters in a back side illuminated image sensor using an etching-stop layer'20179,543,353'Formation of buried color filters in a back side illuminated image sensor with an ONO-like structure'20179,543,343'Mechanisms for forming image sensor device'20179,525,001'Semiconductor device and manufacturing method thereof'20169,478,578'Stress release layout and associated methods and devices'20169,461,089'Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters'20169,443,996'Dielectric structure for color filter array'20169,419,048'Method of manufracturing structure of dielectric grid for a semiconductor device'20169,385,156'Method of manufacturing a back side illuminated (BSI) image sensor'20169,368,531'Formation of buried color filters in a back side illuminated image sensor with an ono-like structure'20169,281,338'Semiconductor image sensor device having back side illuminated image sensors with embedded color filters'20169,224,781'Structure of dielectric grid for a semiconductor device'20159,196,642'Stress release layout and associated methods and devices'20159,130,077'Structure of dielectric grid with a metal pillar for semiconductor device'20158,803,271'Structures for grounding metal shields in backside illumination image sensor chips'20148,652,868'Implanting method for forming photodiode'20148,522,079'System and method for multi-core synchronous debugging of a multi-core platform'20134,371,331'Cigarette lighter with flip-out windshield'1983Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1983Based in Wen Gin Tsuen, Fang Yuan Hsiang, Chang Hua Hsien, TW· patent location history
2013–2014Patents assigned to LEE KUO-CHENG (3)· patent assignee history
2013Based in New Taipei, TW· patent location history
2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (8)· patent assignee history
2014Patents assigned to JENG CHIH-CHERNG (2)· patent assignee history
2014Patents assigned to CHEN PO-ZEN (1)· patent assignee history
2014–2020Based in Tainan, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (76)· patent assignee history
2021Based in Taoyuan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 76 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG | 8 | 2014–2016 |
| LEE KUO-CHENGself | 3 | 2013–2014 |
| JENG CHIH-CHERNG | 2 | 2014 |
| CHEN PO-ZEN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 84 | 2014–2020 |
| Taoyuan, TW | 1 | 2021 |
| New Taipei, TW | 1 | 2013 |
| Wen Gin Tsuen, Fang Yuan Hsiang, Chang Hua Hsien, TW | 1 | 1983 |