LexDanaLexDanabeta
Inventor

Noriyoshi Shimizu

Inventor
Nagano, JP

Overview

107→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 107 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1034%
H05KPrinted circuits15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01LSemiconductor devices13%
Y10TTechnical subjects covered by former us classification3%
H10DInorganic electric semiconductor devices2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
C23CCoating metallic material2%
C02FTreatment of water, waste water, sewage, or sludge1%
H01GCapacitors1%
PatentTitleYear
11,011,457Wiring substrate202110,993,322Circuit board, laminated circuit board, and method of manufacturing circuit board202110,978,383Wiring board and method of manufacturing the same202110,428,422Film-forming method201910,366,949Wiring substrate and semiconductor device201910,326,304Operation state determination system and program201910,262,946Wiring substrate and semiconductor device201910,262,932Wiring board, and semiconductor device201910,192,815Wiring board and semiconductor device201910,074,601Wiring substrate and semiconductor device201810,028,393Wiring substrate and semiconductor package20189,997,474Wiring board and semiconductor device20189,961,760Wiring substrate20189,915,483'Fluid heat exchanging apparatus'20189,880,600'Stand-by power estimating apparatus and program'20189,875,957Wiring substrate and semiconductor device20189,859,201'Wiring substrate, semiconductor device, and method for manufacturing wiring substrate'20189,820,391'Wiring board'20179,780,043'Wiring board, semiconductor package, and semiconductor device'20179,741,652'Wiring substrate'20179,735,098'Wiring substrate and semiconductor device'20179,721,208'Living activity inference device, program, and computer-readable recording medium'20179,709,340'Fluid heat exchanging apparatus'20179,668,341'Wiring substrate and method of making wiring substrate'20179,646,926'Wiring substrate and method of manufacturing the same'20179,620,446'Wiring board, electronic component device, and method for manufacturing those'20179,591,750'Wiring substrate and semiconductor device'20179,565,775'Wiring board, semiconductor device, and method of manufacturing wiring board'20179,564,589'Forming method and forming apparatus of carbon nanotubes'20179,559,058'Semiconductor device and method for manufacturing the same'20179,545,016'Wiring substrate and method for manufacturing wiring substrate'20179,520,352'Wiring board and semiconductor device'20169,455,219'Wiring substrate and method of manufacturing the same'20169,412,687'Wiring substrate and method of manufacturing the same'20169,380,707'Method of manufacturing wiring substrate'20169,340,736'Solid gasification apparatus'20169,332,658'Wiring board, semiconductor device, and method for manufacturing wiring board'20169,257,386'Wiring substrate and semiconductor device'20169,220,167'Wiring substrate, semiconductor device, and method of manufacturing wiring substrate'20159,167,692'Wiring board, semiconductor device, and method of manufacturing wiring board'20159,148,952'Wiring board'20159,119,319'Wiring board, semiconductor device, and method for manufacturing wiring board'20159,054,082'Semiconductor package, semiconductor device, and method for manufacturing semiconductor package'20159,017,636'Manufacturing method of semiconductor device'20159,000,302'Wiring board'20158,823,187'Semiconductor package, semiconductor package manufacturing method and semiconductor device'20148,785,256'Method of manufacturing semiconductor package'20148,724,978'Fluid heating-cooling cylinder device'20148,709,939'Semiconductor device having a multilevel interconnect structure and method for fabricating the same'20148,581,421'Semiconductor package manufacturing method and semiconductor package'20138,551,879'Semiconductor device and method for manufacturing semiconductor device'20138,497,208'Semiconductor device and method for manufacturing the same'20138,415,798'Semiconductor device having a conductor buried in an opening'20138,378,492'Semiconductor package'20138,373,274'Method of forming wiring structure and semiconductor device comprising underlying refractory metal layers'20138,304,908'Semiconductor device having a multilevel interconnect structure and method for fabricating the same'20128,288,875'Method of manufacturing a semiconductor package and semiconductor package having an electrode pad with a small pitch'20128,168,532'Method of manufacturing a multilayer interconnection structure in a semiconductor device'20128,133,813'Semiconductor device with a barrier film'20128,119,524'Method of manufacturing semiconductor device'20128,101,513'Manufacture method for semiconductor device using damascene method'20128,071,474'Method of manufacturing semiconductor device suitable for forming wiring using damascene method'20118,067,836'Semiconductor device with reduced increase in copper film resistance'20118,067,309'Semiconductor device using metal nitride as insulating film and its manufacture method'20118,003,518'Semiconductor device fabrication method'20118,003,527'Manufacturing method of semiconductor device'20117,994,055'Method of manufacturing semiconductor apparatus, and semiconductor apparatus'20117,955,970'Semiconductor device manufacturing method'20117,943,517'Semiconductor device with a barrier film'20117,935,624'Fabrication method of semiconductor device having a barrier layer containing Mn'20117,846,833'Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device'20107,816,279'Semiconductor device and method for manufacturing the same'20107,803,642'Evaluation method of semiconductor device'20107,795,141'Method of manufacturing semiconductor device suitable for forming wiring using damascene method'20107,713,869'Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device'20107,536,780'Method of manufacturing wiring substrate to which semiconductor chip is mounted'20097,507,659'Fabrication process of a semiconductor device'20097,507,666'Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition'20097,413,977'Method of manufacturing semiconductor device suitable for forming wiring using damascene method'20087,414,309'Encapsulated electronic part packaging structure'20087,403,370'Capacitor parts'20087,381,643'Wiring structure forming method and semiconductor device'20087,375,022'Method of manufacturing wiring board'20087,358,180'Method of forming wiring structure and semiconductor device'20087,352,060'Multilayer wiring substrate for providing a capacitor structure inside a multilayer wiring substrate'20087,329,952'Method of fabricating a semiconductor device'20087,314,780'Semiconductor package, method of production of same, and semiconductor device'20087,304,384'Semiconductor device with a barrier film which contains manganese'20077,284,307'Method for manufacturing wiring board'20077,279,790'Semiconductor device and a manufacturing method thereof'20077,229,856'Method of manufacturing electronic part packaging structure'20077,211,519'Method for manufacturing semiconductor device'20077,173,337'Semiconductor device manufactured by the damascene process having improved stress migration resistance'20077,067,919'Semiconductor device'20067,042,093'Semiconductor device using metal nitride as insulating film'20067,038,904'Capacitor and method of producing same'20066,999,299'Capacitor structure, a multi-layer wiring board including the same, and a semiconductor device using the multi-layer wiring board'20066,992,005'Semiconductor device and method of manufacturing the same'20066,921,977'Semiconductor package, method of production of same, and semiconductor device'20056,900,542'Semiconductor device having increased adhesion between a barrier layer for preventing copper diffusion and a conductive layer, and method of manufacturing the same'20056,884,655'Semiconductor package, method of manufacturing the same, and semiconductor device'20056,828,224'Method of fabricating substrate utilizing an electrophoretic deposition process'20046,764,931'Semiconductor package, method of manufacturing the same, and semiconductor device'20046,750,541'Semiconductor device'20046,746,957'Manufacture of semiconductor device with copper wiring'20046,242,808'Semiconductor device with copper wiring and semiconductor device manufacturing method'20015,478,400'Apparatus for fabricating semiconductor devices'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2017Patents assigned to FUJITSU LTD (21)· patent assignee history
1995–2017Based in Kawasaki, JP· patent location history
2004–2021Patents assigned to SHINKO ELECTRIC IND CO (54)· patent assignee history
2004–2021Based in Nagano, JP· patent location history
2007–2012Based in Tama, JP· patent location history
2010–2017Patents assigned to FUJITSU SEMICONDUCTOR LTD (17)· patent assignee history
2011–2017Patents assigned to SHIMIZU NORIYOSHI (16)· patent assignee history
2011–2017Patents assigned to NAKAO YOSHIYUKI (6)· patent assignee history
2012–2019Based in Tokyo, JP· patent location history
2017–2019Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINKO ELECTRIC IND CO542004–2021
FUJITSU LTD211995–2017
FUJITSU SEMICONDUCTOR LTD172010–2017
SHIMIZU NORIYOSHIself162011–2017
NAKAO YOSHIYUKI62011–2017
Locations
LocationPatentsSpan
Nagano, JP542004–2021
Kawasaki, JP381995–2017
Tokyo, JP82012–2019
Osaka, JP32017–2019
Tama, JP32007–2012