Inventor
Youichi Ishimura
Inventor
Tokyo, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices67%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
6,781,200'Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit current'20046,696,702'Silicon carbide semiconductor switching device'20046,329,700'Semiconductor wafer and semiconductor device'20016,207,993'Field effect semiconductor device'20015,729,032'Field effect type semiconductor device and manufacturing method thereof'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2004Patents assigned to MITSUBISHI ELECTRIC CORP (5)· patent assignee history
1998Based in Fukuoka, JP· patent location history
2001–2004Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 5 | 1998–2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 4 | 2001–2004 |
| Fukuoka, JP | 1 | 1998 |