Inventor
JEAN-PIERRE COLINGE
Inventor
FR
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10DInorganic electric semiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures11%
G06FElectric digital data processing1%
G11CStatic stores1%
H01FMagnets1%
H10BElectronic memory devices1%
PatentTitleYear
12,336,261Contacts for highly scaled transistors202512,237,330Architecture with stacked N and P transistors with a channel structure formed of nanowires202512,148,816Devices having a semiconductor material that is semimetal in bulk and methods of forming the same202411,990,532Method of forming transistor202411,961,892Contacts for highly scaled transistors202411,929,417Contacts for highly scaled transistors202411,875,935Integrated electronic device comprising a coil and method for manufacturing such a device202411,854,905Silicon and silicon germanium nanowire formation202311,777,009Contacts for highly scaled transistors202311,646,219Manufacturing process of a structured substrate202311,557,532Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure202311,532,727Method of forming transistor202211,532,7053D cross-bar nonvolatile memory202211,404,325Silicon and silicon germanium nanowire formation202211,362,051RF substrate with junctions having an improved layout202211,302,804Devices having a semiconductor material that is semimetal in bulk and methods of forming the same202211,276,763Contacts for highly scaled transistors202211,239,084Semiconductor device and manufacturing method thereof202211,239,347Method for making a transistor of which the active region includes a semimetal material202211,227,800Method for producing transistors implemented at low temperature202211,152,360Architecture of N and P transistors superposed with canal structure formed of nanowires2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (7)· patent assignee history
2021–2025Based in FR· patent location history
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (14)· patent assignee history
2022–2024Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 14 | 2022–2025 |
| COMMISSARIAT ENERGIE ATOMIQUE | 7 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 14 | 2021–2025 |
| TW | 7 | 2022–2024 |