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Inventor

Sumio Ikegawa

Inventor
Musashino, JP

Overview

43→
Patents
1989–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores27%
H10NElectric solid-state devices not otherwise provided for26%
H10BElectronic memory devices18%
H01LSemiconductor devices6%
B82YSpecific uses or applications of nanostructures4%
H01FMagnets4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light3%
G11BInformation storage based on relative movement between record carrier and transducer3%
H04NPictorial communication, e.g. television3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
11,127,896Shared spin-orbit-torque write line in a spin-orbit-torque MRAM202110,825,500Data storage in synthetic antiferromagnets included in magnetic tunnel junctions202010,659,081Preprogrammed data recovery202010,622,552Magnetoresistive stacks and methods therefor202010,255,961Data storage in synthetic antiferromagnets included in magnetic tunnel junctions20199,678,179'Tester for testing magnetic memory'20179,269,889'Semiconductor memory device and manufacturing method thereof'20169,203,015'Magnetic storage device'20158,878,321'Magnetoresistive element and producing method thereof'20148,634,238'Magnetic memory element having an adjustment layer for reducing a leakage magnetic field from a reference layer and magnetic memory thereof'20148,530,987'Magnetic memory including a magnetoresistive element'20138,472,242'Magnetoresistive effect memory'20138,378,437'Magnetoresistive effect element and magnetic random access memory'20138,349,622'Magneto-resistive element'20138,347,175'Magnetic memory'20138,279,663'Magnetoresistance effect element and magnetic random access memory'20128,223,533'Magnetoresistive effect device and magnetic memory'20128,173,447'Magnetoresistive element and magnetic memory'20128,143,684'Magnetoresistive element'20128,120,948'Data writing method for magnetoresistive effect element and magnetic memory'20128,014,193'Magnetoresistance effect element and magnetic random access memory'20118,009,465'Magnetoresistive element'20117,898,846'Magnetoresistive element'20117,894,246'Magnetoresistive element and magnetic memory'20117,875,903'Magnetic memory device'20117,525,837'Magnetoresistive effect element and magnetic memory'20097,518,906'Magneto-resistive element'20097,518,907'Magnetoresistive element'20097,414,880'Magnetoresistive effect element and magnetic memory'20087,411,263'Magnetic memory device'20087,355,884'Magnetoresistive element'20087,266,011'Magneto-resistance effect element and magnetic memory'20077,245,524'Magnetic memory device and write method of magnetic memory device'20077,203,088'Magnetoresistive random access memory and driving method thereof'20077,193,890'Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method'20077,172,920'Method of manufacturing an image device'20077,038,939'Magneto-resistance effect element and magnetic memory'20067,015,472'Infrared ray detecting type imaging device'20066,984,856'Infrared ray detecting type imaging device'20065,629,267'Superconducting element having an intermediate layer with multiple fluorite blocks'19974,922,462'Reversible memory structure for optical reading and writing and which is capable of erasure'19904,855,992'Reversible optical recording medium with an optothermally deformable recording layer'19894,839,861'Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2017Patents assigned to TOSHIBA KK (36)· patent assignee history
1989–2014Based in Tokyo, JP· patent location history
1997–2013Based in Musashino, JP· patent location history
2012–2017Patents assigned to IKEGAWA SUMIO (15)· patent assignee history
2012–2014Patents assigned to NAKAYAMA MASAHIKO (9)· patent assignee history
2012–2014Patents assigned to YODA HIROAKI (9)· patent assignee history
2012–2015Patents assigned to AIKAWA HISANORI (8)· patent assignee history
2012–2013Based in Yokohama, JP· patent location history
2015–2017Based in Seoul, KR· patent location history
2019–2021Based in Phoenix, AZ, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK361989–2017
IKEGAWA SUMIOself152012–2017
NAKAYAMA MASAHIKO92012–2014
YODA HIROAKI92012–2014
AIKAWA HISANORI82012–2015
Locations
LocationPatentsSpan
Musashino, JP201997–2013
Tokyo, JP101989–2014
Phoenix, AZ, US52019–2021
Yokohama, JP52012–2013
Seoul, KR32015–2017