Inventor
Doo Hyeb Youn
Inventor
Daejeon, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices13%
H01LSemiconductor devices11%
H10NElectric solid-state devices not otherwise provided for9%
G01NInvestigating or analysing materials by determining their chemical or physical properties7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C01BNon-metallic elements4%
D01DMechanical methods or apparatus in the manufacture of artificial filaments, threads, fibres, bristles or ribbons4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10KOrganic electric solid-state devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
10,545,114Chemical sensor and a method for manufacturing the same202010,361,313Electronic device and methods of fabricating the same201910,240,256Electro spinning apparatus201910,138,513Method and device for amplifying and detecting gene using graphene heater20189,275,860'Method of manufacturing a junction electronic device having a 2-dimensional material as a channel'20169,257,610'Light emitting diode and manufacturing method thereof'20169,178,032'Gas sensor and manufacturing method thereof'20159,023,166'Method of transferring graphene'20158,890,197'Light emitting diodes and methods of fabricating the same'20148,673,403'Method for forming fine pattern of polymer thin film'20148,017,268'Lithium secondary battery including discharge unit'20117,863,085'Organic thin film transistor, method of manufacturing the same, and biosensor using the transistor'20117,767,501'Devices using abrupt metal-insulator transition layer and method of fabricating the device'20107,728,327'2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material'20107,684,023'Apparatus and method for generating THz wave by heterodyning optical and electrical waves'20106,987,290'Current-jump-control circuit including abrupt metal-insulator phase transition device'20066,933,553'Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor'20056,864,510'Nitride semiconductor field effect transistor (FET) and method of fabricating the same'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2016Patents assigned to KOREA ELECTRONICS TELECOMM (14)· patent assignee history
2005–2020Based in Daejeon, KR· patent location history
2014Patents assigned to KIM SEONG HYUN (1)· patent assignee history
2014Patents assigned to KIM ZIN SIG (1)· patent assignee history
2014Patents assigned to LIM SANG CHUL (1)· patent assignee history
2018–2020Patents assigned to ELECTRONICS & TELECOMMUNICATIONS RES INST (4)· patent assignee history
2019Based in Sejong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 14 | 2005–2016 |
| ELECTRONICS & TELECOMMUNICATIONS RES INST | 4 | 2018–2020 |
| KIM SEONG HYUN | 1 | 2014 |
| KIM ZIN SIG | 1 | 2014 |
| LIM SANG CHUL | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 16 | 2005–2020 |
| Sejong-si, KR | 2 | 2019 |