Inventor
Yoshiro Kabe
Inventor
Amagasaki, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10DInorganic electric semiconductor devices16%
B21DWorking or processing of sheet metal or metal tubes, rods or profiles without essentially removing material8%
H01JElectric discharge tubes or discharge lamps8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C23CCoating metallic material6%
C21DModifying the physical structure of ferrous metals4%
C22CAlloys4%
H05BElectric heating4%
B08BCleaning in general2%
PatentTitleYear
10,882,094Spinning forming method202110,632,522Method of manufacturing preliminary formed body and axisymmetrical component202010,413,999Methods of manufacturing axisymmetric body and axisymmetric product201910,259,030Spinning forming device201910,259,029Spinning forming device20198,389,420'Method and apparatus for forming silicon oxide film'20138,372,761'Plasma oxidation processing method, plasma processing apparatus and storage medium'20138,318,267'Method and apparatus for forming silicon oxide film'20128,119,530'Pattern forming method and semiconductor device manufacturing method'20128,105,958'Semiconductor device manufacturing method and plasma oxidation treatment method'20128,043,979'Plasma oxidizing method, storage medium, and plasma processing apparatus'20118,034,179'Method for insulating film formation, storage medium from which information is readable with computer, and processing system'20118,026,187'Method of forming silicon oxide film and method of production of semiconductor memory device using this method'20118,003,484'Method for forming silicon oxide film, plasma processing apparatus and storage medium'20117,989,364'Plasma oxidation processing method'20117,981,785'Method for manufacturing semiconductor device and plasma oxidation method'20117,910,495'Plasma oxidizing method, plasma processing apparatus, and storage medium'20117,887,637'Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning'20117,524,774'Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2013Patents assigned to TOKYO ELECTRON LTD (13)· patent assignee history
2009–2013Based in Amagasaki, JP· patent location history
2012–2013Patents assigned to KABE YOSHIRO (5)· patent assignee history
2012–2013Patents assigned to KITAGAWA JUNICHI (4)· patent assignee history
2012–2013Patents assigned to SHIOZAWA TOSHIHIKO (2)· patent assignee history
2019–2021Patents assigned to KAWASAKI HEAVY IND LTD (5)· patent assignee history
2019–2021Based in Kobe, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 13 | 2009–2013 |
| KABE YOSHIROself | 5 | 2012–2013 |
| KAWASAKI HEAVY IND LTD | 5 | 2019–2021 |
| KITAGAWA JUNICHI | 4 | 2012–2013 |
| SHIOZAWA TOSHIHIKO | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Amagasaki, JP | 14 | 2009–2013 |
| Kobe, JP | 5 | 2019–2021 |