Inventor
Zhihong Yang
Inventor
Sunnyvale, CA, US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light28%
H10HInorganic light-emitting semiconductor devices having potential barriers28%
B82YSpecific uses or applications of nanostructures17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H01LSemiconductor devices7%
H10DInorganic electric semiconductor devices5%
C23CCoating metallic material1%
C30BSingle-crystal growth1%
PatentTitleYear
10,249,786Thin film and substrate-removed group III-nitride based devices and method201910,164,146P-side layers for short wavelength light emitters20189,444,224'Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer'20169,401,452'P-side layers for short wavelength light emitters'20169,219,189'Graded electron blocking layer'20158,964,796'Structure for electron-beam pumped edge-emitting device and methods for producing same'20158,822,314'Method of growing epitaxial layers on a substrate'20148,571,817'Integrated vapor delivery systems for chemical vapor deposition precursors'20138,513,643'Mixed alloy defect redirection region and devices including same'20138,354,689'Light emitting devices having dopant front loaded tunnel barrier layers'20138,330,144'Semi-polar nitride-based light emitting structure and method of forming same'20128,247,249'Semi-polar nitride-based light emitting structure and method of forming same'20128,183,649'Buried aperture nitride light-emitting device'20128,154,009'Light emitting structure including high-al content MQWH'20128,143,647'Relaxed InGaN/AlGaN templates'20128,143,154'Relaxed InGaN/AlGaN templates'20128,088,637'Method of manufacturing a semiconductor device including a superlattice strain relief layer'20128,048,703'Light emitting devices with inhomogeneous quantum well active regions'20118,023,544'Semiconductor light emitting devices with non-epitaxial upper cladding'20118,000,366'Laser diode with high indium active layer and lattice matched cladding layer'20117,856,040'Semiconductor light emitting devices with non-epitaxial upper cladding'20107,812,421'Light emitting devices with an electrically active top reflector contact'20107,723,719'Light emitting devices with inhomogeneous quantum well active regions'20107,718,455'Method of forming a buried aperture nitride light emitting device'20107,714,340'Nitride light-emitting device'20107,547,925'Superlattice strain relief layer for semiconductor devices'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2019Patents assigned to PALO ALTO RES CT INC (25)· patent assignee history
2009–2015Based in Sunnyvale, CA, US· patent location history
2012–2016Patents assigned to YANG ZHIHONG (13)· patent assignee history
2012–2016Patents assigned to CHUA CHRISTOPHER L (11)· patent assignee history
2012–2016Patents assigned to JOHNSON NOBLE M (6)· patent assignee history
2012–2016Patents assigned to NORTHRUP JOHN E (4)· patent assignee history
2013–2019Based in San Jose, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PALO ALTO RES CT INC | 25 | 2009–2019 |
| YANG ZHIHONGself | 13 | 2012–2016 |
| CHUA CHRISTOPHER L | 11 | 2012–2016 |
| JOHNSON NOBLE M | 6 | 2012–2016 |
| NORTHRUP JOHN E | 4 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 19 | 2009–2015 |
| San Jose, California, US | 7 | 2013–2019 |