Inventor

Reinhard Schauer

Inventor
Laufen, DE

Overview

15→
Patents
1994–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 15 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
C30BSingle-crystal growth30%
C23CCoating metallic material11%
H01LSemiconductor devices9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures2%
H10DInorganic electric semiconductor devices2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
10,991,614Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptor202110,597,795Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layer20209,991,208Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer20189,240,316'Method for producing an epitaxially coated semiconductor wafer'20168,304,860'Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer'20127,935,614'Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers'20117,922,813'Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers'20117,838,398'Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer'20107,659,207'Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer'20107,579,261'Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers'20097,285,483'Coated semiconductor wafer, and process and apparatus for producing the semiconductor wafer'20077,101,794'Coated semiconductor wafer, and process and device for producing the semiconductor wafer'20066,630,024'Method for the production of an epitaxially grown semiconductor wafer'20036,306,735'Method for producing a semiconductor wafer'20015,355,831'Epitaxially coated semiconductor wafers having low-oxygen zone of adjustable extent and process for producing same'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2021Based in Laufen, DE· patent location history
2001–2003Patents assigned to WACKER SILTRONIC HALBLEITERMAT (2)· patent assignee history
2006–2021Patents assigned to SILTRONIC AG (11)· patent assignee history
2012–2016Patents assigned to SCHAUER REINHARD (2)· patent assignee history
2012Patents assigned to LAUBE FRANK (1)· patent assignee history
2016Patents assigned to HAGER CHRISTIAN (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SILTRONIC AG112006–2021
SCHAUER REINHARDself22012–2016
WACKER SILTRONIC HALBLEITERMAT22001–2003
HAGER CHRISTIAN12016
LAUBE FRANK12012
Locations
LocationPatentsSpan
Laufen, DE151994–2021