LexDanaLexDanabeta
Inventor

Tsutomu Tezuka

Inventor
Yokohama, JP

Overview

54→
Patents
1993–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices14%
G11CStatic stores11%
H10BElectronic memory devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
B82YSpecific uses or applications of nanostructures5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
PatentTitleYear
10,790,396Semiconductor device and method for manufacturing the same202010,714,629Transistor, semiconductor memory device, and method of manufacturing transistor202010,665,587Semiconductor device and manufacturing method of the same202010,643,671Semiconductor device202010,553,601Semiconductor memory including semiconductor oxide202010,497,712Semiconductor memory201910,332,581Semiconductor memory device201910,312,239Semiconductor memory including semiconductor oxie201910,096,641CMOS image sensor201810,056,150Non-volatile semiconductor memory device201810,049,720Dynamic random access memory (DRAM)201810,043,808Semiconductor memory20189,978,441Semiconductor memory device20189,853,040Semiconductor memory device20179,837,549Oxide semiconductor and semiconductor device20179,806,082'Semiconductor memory device including a sense amplifier on a semiconductor substrate, a memory cell including a capacitor and a transistor including conductive lines electrically connected to the sense amplifier'20179,787,924'Image sensor device, image processing device and method for manufacturing image sensor device'20179,780,170'Semiconductor memory device'20179,721,951'Semiconductor device using Ge channel and manufacturing method thereof'20179,698,272'Transistor and semiconductor memory device'20179,543,376'Semiconductor device and method for manufacturing the same'20178,778,766'Field effect transistor, integrated circuit element, and method for manufacturing the same'20148,766,236'Semiconductor device and method of manufacturing the same'20148,685,842'Method of manufacturing semiconductor device'20148,574,993'Semiconductor device and method of manufacturing the same'20138,492,793'Semiconductor device and method of manufacturing the same'20138,394,690'Semiconductor device and fabrication method thereof'20138,389,347'Field effect transistor and method for manufacturing the same'20138,304,817'Field effect transistor and method for manufacturing the same'20128,288,760'Field effect transistor, integrated circuit element, and method for manufacturing the same'20128,242,568'Semiconductor device and fabrication method thereof'20128,154,082'Semiconductor device and manufacturing method thereof'20127,985,634'Semiconductor device and method for manufacturing the same'20117,923,314'Field effect transistor and method for manufacturing the same'20117,759,228'Semiconductor device and method of manufacturing the same'20107,728,324'Field effect transistor, integrated circuit element, and method for manufacturing the same'20107,675,115'Semiconductor device and method for manufacturing the same'20107,659,537'Field effect transistor'20107,619,239'Semiconductor device and method of manufacturing the same'20097,557,018'Element fabrication substrate'20097,009,200'Field effect transistor'20067,005,676'Semiconductor device manufacturing method'20066,917,096'Semiconductor device and method of manufacturing substrate'20056,774,390'Semiconductor device'20046,727,550'Integrated circuit device'20046,713,779'Semiconductor device and method of manufacturing the same'20046,607,948'Method of manufacturing a substrate using an SiGe layer'20036,509,587'Semiconductor device'20036,407,406'Semiconductor device and method of manufacturing the same'20026,060,743'Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same'20005,923,046'Quantum dot memory cell'19995,847,419'Si-SiGe semiconductor device and method of fabricating the same'19985,432,812'Semiconductor laser device with multi-directional reflector arranged therein'19955,253,262'Semiconductor laser device with multi-directional reflector arranged therein'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2020Patents assigned to TOSHIBA KK (42)· patent assignee history
1993–2020Based in Yokohama, JP· patent location history
2004–2012Based in Kanagawa, JP· patent location history
2012–2014Patents assigned to TEZUKA TSUTOMU (11)· patent assignee history
2012–2013Patents assigned to IKEDA KEIJI (4)· patent assignee history
2012–2013Patents assigned to MORIYAMA YOSHIHIKO (4)· patent assignee history
2014–2017Based in Tsukuba, JP· patent location history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (12)· patent assignee history
2017–2020Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK421993–2020
TOSHIBA MEMORY CORP122017–2020
TEZUKA TSUTOMUself112012–2014
IKEDA KEIJI42012–2013
MORIYAMA YOSHIHIKO42012–2013
Locations
LocationPatentsSpan
Yokohama, JP451993–2020
Ibaraki, JP52017–2020
Tsukuba, JP22014–2017
Kanagawa, JP22004–2012