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Inventor

Ravi M. Todi

Inventor
Poughkeepsie, NY, US

Overview

54→
Patents
2007–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices18%
H10BElectronic memory devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G08BSignalling systems, e.g. personal calling systems1%
PatentTitleYear
10,818,668Metal trench capacitor and improved isolation and methods of manufacture20209,899,391'Metal trench capacitor and improved isolation and methods of manufacture'20189,583,497'Metal trench capacitor and improved isolation and methods of manufacture'20179,478,600'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20169,461,042'Sublithographic width finFET employing solid phase epitaxy'20169,412,640'Semiconductor device including substrate contact and related method'20169,397,152'Multilayer MIM capacitor'20169,379,177'Deep trench capacitor'20169,293,520'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20169,287,272'Metal trench capacitor and improved isolation and methods of manufacture'20169,257,433'Structure and method of forming enhanced array device isolation for implanted plate EDRAM'20169,245,971'Semiconductor device having high mobility channel'20169,224,801'Multilayer MIM capacitor'20159,159,578'Self-aligned devices and methods of manufacture'20159,087,928'High density memory cells using lateral epitaxy'20159,064,745'Sublithographic width finFET employing solid phase epitaxy'20159,059,213'Embedded DRAM for extremely thin semiconductor-on-insulator'20159,059,320'Structure and method of forming enhanced array device isolation for implanted plate EDRAM'20159,058,987'Rare-earth oxide isolated semiconductor fin'20159,054,126'Recessed single crystalline source and drain for semiconductor-on-insulator devices'20159,048,339'Deep trench capacitor'20158,962,423'Multilayer MIM capacitor'20158,936,996'Structure and method for topography free SOI integration'20158,936,992'Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate'20158,921,198'Method and structure for forming a deep trench capacitor'20148,853,781'Rare-earth oxide isolated semiconductor fin'20148,846,470'Metal trench capacitor and improved isolation and methods of manufacture'20148,836,050'Structure and method to fabricate a body contact'20148,836,003'Lateral epitaxial grown SOI in deep trench structures and methods of manufacture'20148,829,585'High density memory cells using lateral epitaxy'20148,809,994'Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate'20148,754,461'Spacer isolation in deep trench'20148,742,503'Recessed single crystalline source and drain for semiconductor-on-insulator devices'20148,692,307'Lateral epitaxial grown SOI in deep trench structures and methods of manufacture'20148,691,697'Self-aligned devices and methods of manufacture'20148,647,945'Method of forming substrate contact for semiconductor on insulator (SOI) substrate'20148,637,365'Spacer isolation in deep trench'20148,637,958'Structure and method for forming isolation and buried plate for trench capacitor'20148,575,670'Embedded dynamic random access memory device formed in an extremely thin semiconductor on insulator (ETSOI) substrate'20138,564,069'Field effect transistors with low body resistance and self-balanced body potential'20138,455,979'Three dimensional integrated deep trench decoupling capacitors'20138,455,875'Embedded DRAM for extremely thin semiconductor-on-insulator'20138,409,989'Structure and method to fabricate a body contact'20138,372,725'Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates'20138,298,907'Structure and method of forming enhanced array device isolation for implanted plate eDRAM'20128,299,530'Structure and method to fabricate pFETS with superior GIDL by localizing workfunction'20128,298,908'Structure and method for forming isolation and buried plate for trench capacitor'20128,232,163'Lateral epitaxial grown SOI in deep trench structures and methods of manufacture'20128,232,162'Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal'20128,222,104'Three dimensional integrated deep trench decoupling capacitors'20128,168,507'Structure and method of forming enhanced array device isolation for implanted plate EDRAM'20128,110,464'SOI protection for buried plate implant and DT bottle ETCH'20127,825,479'Electrical antifuse having a multi-thickness dielectric layer'20107,164,358'Frequency divider with variable capacitance'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2020Patents assigned to IBM (47)· patent assignee history
2010–2016Based in Poughkeepsie, NY, US· patent location history
2012–2015Patents assigned to TODI RAVI M (29)· patent assignee history
2012–2015Patents assigned to WANG GENG (26)· patent assignee history
2012–2015Patents assigned to CHENG KANGGUO (20)· patent assignee history
2012–2015Patents assigned to ERVIN JOSEPH (20)· patent assignee history
2012–2014Based in Hopewell Junction, NY, US· patent location history
2012Based in Wappingers Falls, NY, US· patent location history
2014–2020Based in San Diego, CA, US· patent location history
2014Based in Del Mar, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM472010–2020
TODI RAVI Mself292012–2015
WANG GENG262012–2015
CHENG KANGGUO202012–2015
ERVIN JOSEPH202012–2015
Locations
LocationPatentsSpan
Poughkeepsie, New York, US252010–2016
San Diego, California, US192014–2020
Hopewell Junction, New York, US72012–2014
Del Mar, California, US12014
Wappingers Falls, New York, US12012