Inventor
Xiaoyi Chen
Inventor
Foster City, CA, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
C23FNon-mechanical removal of metallic material from surface15%
H10NElectric solid-state devices not otherwise provided for14%
B82YSpecific uses or applications of nanostructures11%
H01FMagnets11%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices6%
H01JElectric discharge tubes or discharge lamps3%
H01LSemiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B08BCleaning in general2%
PatentTitleYear
10,776,133Preemptive loading of code dependencies for improved performance202010,282,818Image deformation processing method, device and storage medium201910,199,224Method for improving CD micro-loading in photomask plasma etching201910,115,572Methods for in-situ chamber clean in plasma etching processing chamber20189,425,062'Method for improving CD micro-loading in photomask plasma etching'20167,829,243'Method for plasma etching a chromium layer suitable for photomask fabrication'20107,635,546'Phase shifting photomask and a method of fabricating thereof'20097,320,942'Method for removal of metallic residue after plasma etching of a metal layer'20087,105,361'Method of etching a magnetic material'20066,984,585'Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer'20066,964,928'Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask'20056,942,813'Method of etching magnetic and ferroelectric materials using a pulsed bias source'20056,933,239'Method for removing conductive residue'20056,911,346'Method of etching a magnetic material'20056,841,484'Method of fabricating a magneto-resistive random access memory (MRAM) device'20056,821,907'Etching methods for a magnetic memory cell stack'20046,759,263'Method of patterning a layer of magnetic material'20046,709,609'Plasma heating of a substrate with subsequent high temperature etching'20046,692,648'Method of plasma heating and etching a substrate'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2019Patents assigned to APPLIED MATERIALS INC (14)· patent assignee history
2004–2019Based in Foster City, CA, US· patent location history
2004Based in Redwood City, CA, US· patent location history
2005Patents assigned to CHEN XIAOYI (1)· patent assignee history
2005Patents assigned to KUMAR AJAY (1)· patent assignee history
2005Patents assigned to NALLAN PADMAPANI C (1)· patent assignee history
2019Based in Shenzhen, CN· patent location history
2020Patents assigned to SALESFORCE COM INC (1)· patent assignee history
2020Based in Sunnyvale, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 14 | 2004–2019 |
| CHEN XIAOYIself | 1 | 2005 |
| KUMAR AJAY | 1 | 2005 |
| NALLAN PADMAPANI C | 1 | 2005 |
| SALESFORCE COM INC | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Foster City, California, US | 15 | 2004–2019 |
| Redwood City, California, US | 2 | 2004 |
| Sunnyvale, California, US | 1 | 2020 |
| Shenzhen, CN | 1 | 2019 |