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Inventor

Katsuya Nishiyama

Inventor
Yokohama, JP

Overview

56→
Patents
2004–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for25%
G11CStatic stores23%
H10BElectronic memory devices19%
H01LSemiconductor devices10%
H01FMagnets9%
B82YSpecific uses or applications of nanostructures7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
Y10TTechnical subjects covered by former us classification2%
G11BInformation storage based on relative movement between record carrier and transducer1%
B41JTypewriters1%
PatentTitleYear
10,305,025Magnetic memory device201910,236,077Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage device201910,230,042Magnetoresistive element and method of manufacturing the same20199,882,119'Magnetic memory device'20189,653,138'Magnetic memory and method of writing data'20179,590,174'Magnetoresistive memory device and manufacturing method of the same'20179,385,307'Magnetoresistive element and method of manufacturing the same'20169,373,776'Magnetoresistive element and magnetic memory using the same'20169,312,475'Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element'20169,312,477'Semiconductor storage device with magnetoresistive element'20169,196,823'Magnetoresistive effect element'20159,176,323'Optical scanning device, image forming apparatus having the same, and method therefor'20159,178,137'Magnetoresistive element and magnetic memory'20159,153,770'Magnetoresistive element and magnetic memory'20159,070,866'Magnetoresistive effect element and manufacturing method thereof'20159,018,719'Magnetoresistive element and magnetic memory'20158,982,614'Magnetoresistive effect element and manufacturing method thereof'20158,953,369'Magnetoresistive element and magnetic memory using the same'20158,946,837'Semiconductor storage device with magnetoresistive element'20158,895,162'Magnetoresistive element and magnetic memory'20148,897,060'Magnetoresistance effect element and magnetic memory'20148,750,029'Magnetoresistive effect element and magnetic memory'20148,750,030'Magnetoresistive element and magnetic random access memory'20148,705,269'Magnetoresistive element and magnetic memory'20148,686,521'Magnetoresistive element and magnetic memory'20148,670,268'Magnetoresistive element and magnetic memory using the same'20148,669,628'Magnetoresistive element and magnetic memory using the same'20148,665,639'Magnetoresistive element and magnetic memory'20148,659,103'Magnetoresistive element and magnetic memory using the same'20148,547,737'Magnetoresistive element and magnetic memory'20138,502,331'Magnetoresistive effect element, magnetic memory'20138,305,801'Magnetoresistive element and magnetic memory'20128,299,552'Magnetoresistive element and magnetic memory'20128,218,355'Magnetoresistive element and magnetic memory'20128,208,292'Magnetoresistive element and magnetic memory'20128,169,817'Magnetoresistive device and magnetic random access memory'20128,143,684'Magnetoresistive element'20128,107,281'Magnetoresistive element and magnetic memory'20128,098,514'Magnetoresistive element and magnetic memory'20127,898,846'Magnetoresistive element'20117,596,015'Magnetoresistive element and magnetic memory'20097,483,291'Magneto-resistance effect element, magnetic memory and magnetic head'20097,474,554'Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same'20097,355,824'Magnetoresistive effect element and magnetic memory having the same'20087,298,644'Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same'20077,245,464'Magnetic memory having a ferromagnetic tunneling junction'20077,054,187'Magnetic memory'20066,956,765'Magneto-resistance effect element, magnetic memory and magnetic head'20056,934,184'Magnetic memory'20056,879,475'Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head'20056,831,857'Magnetic memory'20046,831,855'Magnetic memory'20046,826,078'Magnetoresistive effect element and magnetic memory having the same'20046,807,094'Magnetic memory'20046,765,824'Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory'20046,717,845'Magnetic memory'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2017Patents assigned to TOSHIBA KK (50)· patent assignee history
2004–2019Based in Yokohama, JP· patent location history
2004–2015Based in Kanagawa, JP· patent location history
2012–2017Patents assigned to NISHIYAMA KATSUYA (23)· patent assignee history
2012–2015Patents assigned to NAGASE TOSHIHIKO (20)· patent assignee history
2012–2017Patents assigned to KAI TADASHI (18)· patent assignee history
2012–2015Patents assigned to YODA HIROAKI (16)· patent assignee history
2015Based in Kuwana, JP· patent location history
2017Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK502004–2017
NISHIYAMA KATSUYAself232012–2017
NAGASE TOSHIHIKO202012–2015
KAI TADASHI182012–2017
YODA HIROAKI162012–2015
Locations
LocationPatentsSpan
Yokohama, JP412004–2019
Kanagawa, JP132004–2015
Seoul, KR12017
Kuwana, JP12015