Inventor
Ryan W. Wuthrich
Inventor
Burlington, VT, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1034%
H10DInorganic electric semiconductor devices29%
C30BSingle-crystal growth9%
C04BLime, magnesia6%
H05KPrinted circuits6%
Y10TTechnical subjects covered by former us classification6%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form3%
C23CCoating metallic material3%
F27DDetails or accessories of furnaces, kilns, ovens or retorts, in so far as they are of kinds occurring in more than one kind of furnace3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
7,713,829'Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology'20107,413,967'Yield improvement in silicon-germanium epitaxial growth'20087,173,274'Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology'20077,118,995'Yield improvement in silicon-germanium epitaxial growth'20066,900,519'Diffused extrinsic base and method for fabrication'20056,881,259'In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films'20056,875,279'Single reactor, multi-pressure chemical vapor deposition for semiconductor devices'20056,869,854'Diffused extrinsic base and method for fabrication'20056,858,532'Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling'20056,858,903'MOSFET device with in-situ doped, raised source and drain structures'20056,815,802'Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology'20046,780,735'Method to increase carbon and boron doping concentrations in Si and SiGe films'20046,774,000'Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures'20046,744,079'Optimized blocking impurity placement for SiGe HBTs'20046,426,265'Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology'20026,354,309'Process for treating a semiconductor substrate'20026,173,720'Process for treating a semiconductor substrate'20015,948,193'Process for fabricating a multilayer ceramic substrate from thin greensheet'19995,874,162'Weighted sintering process and conformable load tile'19995,741,131'Stacking system for substrates'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2010Patents assigned to IBM (20)· patent assignee history
1998–1999Based in Fishkill, NY, US· patent location history
1999Based in FISHIKILL, NY, US· patent location history
2001–2010Based in Burlington, VT, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 20 | 1998–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Burlington, VT, US | 17 | 2001–2010 |
| Fishkill, New York, US | 2 | 1998–1999 |
| FISHIKILL, New York, US | 1 | 1999 |