Inventor
CHIA-WEI HSU
Inventor
TW
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices18%
G06FElectric digital data processing7%
H03KPulse technique7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G01RMeasuring electric variables4%
H02HEmergency protective circuit arrangements4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G05FSystems for regulating electric or magnetic variables3%
PatentTitleYear
12,572,457Processor suitable for multi-segment accessing memory and operation method thereof202612,527,073Gate structures in semiconductor devices202612,455,400Ultra-compact multilayer metasurface imaging system integrating lenses and spaces202512,376,364Semiconductor device and method of manufacture202512,360,039Multi-spectral scattering-matrix tomography202512,336,273Method for forming semiconductor structure using fluorine to treat gate stack202512,282,247Detection device preventing damage to detection module from heat generated by light source202512,272,557Semiconductor device and method202512,265,412Low dropout regulator circuits, input/output device, and methods for operating a low dropout regulator202512,170,283Capacitor cell and structure thereof202412,147,810Processor, operation method, and load-store device for implementation of accessing vector strided memory202412,148,746Integrated circuit and method of manufacturing same202412,100,732Semiconductor device and method of manufacturing same202412,051,896Device and method for operating the same202412,002,706Structure and method for enhancing robustness of ESD device202411,966,241Low dropout regulator circuits, input/output device, and methods for operating a low dropout regulator202411,915,979Gate structures in semiconductor devices202411,881,409Method of cutting fin202411,862,468Semiconductor device and method202411,756,832Gate structures in semiconductor devices202311,750,239Front-end module providing enhanced switching speed202311,742,236Structure and method for enhancing robustness of ESD device202311,710,962Device and method for operating the same202311,664,381Capacitor cell and structure thereof202311,462,626Semiconductor device and method of manufacture202211,355,927Device and method for operating the same202211,340,691Heat dissipation apparatus with energy-saving effect and method of controlling the same202211,341,310Layout-versus-schematic (LVS) debugging and error diagnosis via type of graph matching2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history
2022Patents assigned to DELTA ELECTRONICS INC (1)· patent assignee history
2022–2026Based in TW· patent location history
2024–2026Patents assigned to ANDES TECH CORPORATION (2)· patent assignee history
2025Patents assigned to UNIV SOUTHERN CALIFORNIA (2)· patent assignee history
2025Patents assigned to HENAN FUCHI TECH CO LTD (1)· patent assignee history
2025Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 19 | 2022–2026 |
| ANDES TECH CORPORATION | 2 | 2024–2026 |
| UNIV SOUTHERN CALIFORNIA | 2 | 2025 |
| DELTA ELECTRONICS INC | 1 | 2022 |
| HENAN FUCHI TECH CO LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 26 | 2022–2026 |
| US | 2 | 2025 |