Inventor
Hiroyuki Okuyama
Inventor
Kanagawa, JP
Overview
Patents· 92 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
H04NPictorial communication, e.g. television6%
C30BSingle-crystal growth6%
H01LSemiconductor devices4%
B82YSpecific uses or applications of nanostructures3%
LOC132%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,516,080Semiconductor device and apparatus for improved light emission201910,050,177GaN based semiconductor light-emitting device and method for producing same20189,786,638'Light-emitting device and display device'20179,566,818'Writing instrument'20179,373,274'Light-emitting device and display device'20169,368,685'Semiconductor light emitting device, method of manufacturing the same, image display device, and electronic apparatus'20169,132,692'Writing instrument'20158,993,992'GaN based semiconductor light-emitting device and method for producing same'20158,946,764'Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device'20158,928,009'Light emitting device, illuminating device, and display device'20158,741,451'Crystal film, crystal substrate, and semiconductor device'20148,731,422'Image forming apparatus and method for re-executing duplex printing'20148,616,797'Thermosensitive decolorable ink composition'20138,319,808'Image forming apparatus'20128,168,966'GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly'20127,956,380'Semiconductor light-emitting device'20117,928,452'GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus'20117,789,458'Structure of coupling portions of exterior parts'20107,727,331'Crystal firm, crystal substrate, and semiconductor device'20107,706,022'Image forming apparatus and image forming method'20107,700,959'Semiconductor light-emitting device, semiconductor light-emitting apparatus, and method of manufacturing semiconductor light-emitting device'20107,695,991'Method for manufacturing GaN semiconductor light-emitting element'20107,616,343'Image data conversion apparatus, image forming apparatus, image data conversion method and program'20097,589,346'GaN based semiconductor light-emitting device and method for producing same'20097,564,064'Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion'20097,553,370'Crystal growth method for nitride semiconductor and formation method for semiconductor device'20097,550,775'GaN semiconductor light-emitting element and method for manufacturing the same'20097,501,663'Semiconductor light-emitting device, and image display device and lighting unit comprising same'20097,492,484'Image signal processing method and apparatus for limiting amount of toner stick'20097,468,528'Semiconductor light-emitting device'20087,452,789'Method for forming underlayer composed of GaN-based compound semiconductor, GaN-based semiconductor light-emitting element, and method for manufacturing GaN-based semiconductor light-emitting element'20087,364,805'Crystal film, crystal substrate, and semiconductor device'20087,324,230'Image forming apparatus and image forming method for forming color and monochromatic images'20087,298,506'Image forming apparatus and image forming method for preventing counterfeiting'20077,250,320'Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof'20077,236,263'Image processing system and method for improved color conversion'20077,227,189'Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device'20077,221,001'Semiconductor light-emitting device and process for producing the same'20077,205,168'Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method'20077,135,348'Semiconductor light emitting device and fabrication method thereof'20067,129,514'Image display unit'20067,129,515'Lighting system'20067,129,107'Process for producing a semiconductor light-emitting device'20067,122,825'Lighting system'20067,122,394'Process for producing a semiconductor light-emitting device'20067,122,826'Image display unit'20067,087,932'Semiconductor light-emitting device and semiconductor light-emitting device'20067,067,339'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20067,033,436'Crystal growth method for nitride semiconductor and formation method for semiconductor device'20067,030,421'Semiconductor light emitting device and fabrication method thereof'20067,002,182'Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit'20067,002,183'Semiconductor light emitting device having a semiconductor layer formed by selective growth'20066,998,645'Semiconductor light emitting device having a semiconductor layer formed by selective growth'20066,969,670'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20056,967,353'Semiconductor light emitting device and fabrication method thereof'20056,961,150'Image processing apparatus and image forming apparatus'20056,946,686'Method of fabricating semiconductor device and semiconductor device'20056,927,164'Method of fabricating semiconductor device and semiconductor device'20056,924,500'Semiconductor light-emitting device and process for producing the same'2005D0505924'Semiconductor element'2005D0505923'Semiconductor element'20056,881,982'Semiconductor light emitting device'20056,870,190'Display unit and semiconductor light emitting device'20056,858,081'Selective growth method, and semiconductor light emitting device and fabrication method thereof'20056,831,300'Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer'20046,828,591'Semiconductor light emitting device and fabrication method thereof'20046,818,465'Nitride semiconductor element and production method for nitride semiconductor element'20046,818,463'Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device'20046,734,030'Semiconductor light emitting device and method of fabricating semiconductor light emitting device'20046,686,611'Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof'20046,623,560'Crystal growth method'20036,576,571'Process of vapor phase growth of nitride semiconductor'2003D0472531'Semiconductor element'2003D0472529'Semiconductor element'20036,462,354'Semiconductor device and semiconductor light emitting device'20026,429,032'Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof'20026,278,804'Image processing apparatus with smoothing feature'20016,206,962'Semiconductor light emitting device and method of manufacturing same'20016,069,367'Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices'20005,872,023'Method of fabricating of light emitting device with controlled lattice mismatch'19995,865,897'Method of producing film of nitrogen-doped II-VI group compound semiconductor'19995,740,193'Semiconductor light-emitting device'19985,657,336'Semiconductor light-emitting device'19975,633,514'Semiconductor light emitting device with lattice-matching and lattice-mismatching'19975,582,424'Occupant restraint device'19965,567,960'II/VI-compound semiconductor light emitting device'19965,515,393'Semiconductor laser with ZnMgSSe cladding layers'19965,506,855'Semiconductor laser'19965,375,134'Semiconductor light emitting device'19945,268,918'Semiconductor laser'19935,239,552'Laser output unit'19935,234,842'Method of producing p-typed CdS'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2018Patents assigned to SONY CORP (75)· patent assignee history
1993–2018Based in Kanagawa, JP· patent location history
1996–2010Based in Ebina, JP· patent location history
2001–2014Patents assigned to TOSHIBA KK (8)· patent assignee history
2003–2019Based in Tokyo, JP· patent location history
2005–2014Patents assigned to TOSHIBA TEC KK (9)· patent assignee history
2007–2010Based in Mishima, JP· patent location history
2012–2016Patents assigned to OKUYAMA HIROYUKI (10)· patent assignee history
2012–2015Patents assigned to BIWA GOSHI (4)· patent assignee history
2013–2017Based in Fujioka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 75 | 1993–2018 |
| OKUYAMA HIROYUKIself | 10 | 2012–2016 |
| TOSHIBA TEC KK | 9 | 2005–2014 |
| TOSHIBA KK | 8 | 2001–2014 |
| BIWA GOSHI | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 73 | 1993–2018 |
| Tokyo, JP | 5 | 2003–2019 |
| Mishima, JP | 5 | 2007–2010 |
| Fujioka, JP | 3 | 2013–2017 |
| Ebina, JP | 2 | 1996–2010 |