Inventor
HIROAKI NIIMI
Inventor
US
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
PatentTitleYear
12,588,435Selective inhibition for selective metal deposition202612,400,963Conductive superlattice structures and methods of forming the same202512,288,692Method of forming a FET structure by selective deposition of film on source/drain contact202512,284,820Dual metal wrap-around contacts for semiconductor devices202512,237,216Method for filling recessed features in semiconductor devices with a low-resistivity metal202511,562,906Low resistance source drain contact formation with trench metastable alloys and laser annealing202311,374,101Dual metal wrap-around contacts for semiconductor devices202211,264,274Reverse contact and silicide process for three-dimensional logic devices202211,201,089Robust low-k bottom spacer for VFET2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to IBM (2)· patent assignee history
2021–2026Based in US· patent location history
2022–2026Patents assigned to TOKYO ELECTRON LTD (7)· patent assignee history
2023Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 7 | 2022–2026 |
| IBM | 2 | 2021–2023 |
| GLOBALFOUNDRIES INC | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 9 | 2021–2026 |