Inventor
Mei-Yen Li
Inventor
Hsinchu, TW
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10DInorganic electric semiconductor devices14%
H10BElectronic memory devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
B22DCasting of metals4%
B24BMachines, devices, or processes for grinding or polishing4%
B62DMotor vehicles4%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds4%
C08LCompositions of macromolecular compounds4%
C22CAlloys4%
PatentTitleYear
10,752,980Advanced cast aluminum alloys for automotive engine application with superior high-temperature properties20209,415,810'Vehicle roof structure including a cast node'20167,386,418'Yield analysis method'20087,205,167'Method to detect photoresist residue on a semiconductor device'20077,049,393'Techniques for the preparation of highly fluorinated polyethers'20066,812,156'Method to reduce residual particulate contamination in CVD and PVD semiconductor wafer manufacturing'20046,716,740'Method for depositing silicon oxide incorporating an outgassing step'20046,307,628'Method and apparatus for CMP end point detection using confocal optics'20016,242,355'Method for insulating metal conductors by spin-on-glass and devices made'20016,194,249'Method of assembly stress protection'20016,103,571'Method for forming a DRAM capacitor having improved capacitance and device formed'20006,087,217'Method for improving capacitance in DRAM capacitors and devices formed'20006,033,967'Method for increasing capacitance in DRAM capacitors and devices formed'20006,020,234'Increasing capacitance for high density DRAM by microlithography patterning'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2008Patents assigned to TAIWAN SEMICONDUCTOR MFG (11)· patent assignee history
2000–2001Based in Hsinchu, TW· patent location history
2001–2007Based in Tainan, TW· patent location history
2006Patents assigned to CA NAT RESEARCH COUNCIL (1)· patent assignee history
2008Based in Hsinchu County, TW· patent location history
2016–2020Patents assigned to FORD GLOBAL TECH LLC (2)· patent assignee history
2016Based in Canton, MI, US· patent location history
2020Based in Bloomfield Hills, MI, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 11 | 2000–2008 |
| FORD GLOBAL TECH LLC | 2 | 2016–2020 |
| CA NAT RESEARCH COUNCIL | 1 | 2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 5 | 2000–2001 |
| Tainan, TW | 4 | 2001–2007 |
| Bloomfield Hills, MI, US | 1 | 2020 |
| Canton, MI, US | 1 | 2016 |
| Hsinchu County, TW | 1 | 2008 |