Inventor
Hiromitsu Kudo
Inventor
Ibaraki, JP
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10HInorganic light-emitting semiconductor devices having potential barriers29%
C23CCoating metallic material14%
C30BSingle-crystal growth14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
PatentTitleYear
8,946,772'Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element'20158,716,728'Nitride semiconductor light-emitting diode device'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2015Patents assigned to KUDO HIROMITSU (2)· patent assignee history
2014–2015Patents assigned to MITSUBISHI CHEM CORP (2)· patent assignee history
2014–2015Patents assigned to OKAGAWA HIROAKI (2)· patent assignee history
2014Patents assigned to HIRAOKA SHIN (1)· patent assignee history
2014Patents assigned to JOICHI TAKAHIDE (1)· patent assignee history
2014Based in Ushiku, JP· patent location history
2015Based in Ibaraki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KUDO HIROMITSUself | 2 | 2014–2015 |
| MITSUBISHI CHEM CORP | 2 | 2014–2015 |
| OKAGAWA HIROAKI | 2 | 2014–2015 |
| HIRAOKA SHIN | 1 | 2014 |
| JOICHI TAKAHIDE | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ibaraki, JP | 1 | 2015 |
| Ushiku, JP | 1 | 2014 |