Inventor

Yuuichi Mikata

Inventor
Kawasaki, JP

Overview

46→
Patents
1986–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
H10DInorganic electric semiconductor devices22%
C23CCoating metallic material14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
C30BSingle-crystal growth3%
F04DNon-positive-displacement pumps3%
F04BPositive-displacement machines for liquids2%
G01MTesting static or dynamic balance of machines or structures2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
7,844,433'System, method and program for designing a utility facility and method for manufacturing a product by the utility facility'20107,632,382'Plating apparatus'20097,497,908'Film coating unit and film coating method'20097,145,667'Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, semiconductor device manufacturing system, and cleaning method for semiconductor device manufacturing apparatus'20066,989,281'Cleaning method for a semiconductor device manufacturing apparatus'20066,983,191'Semiconductor manufacturing line availability evaluating system and design system'20066,944,572'Apparatus for predicting life of rotary machine and equipment using the same'20056,929,991'Reliable semiconductor device and method of manufacturing the same'20056,867,054'Method of manufacturing a semiconductor device'20056,865,513'Method for predicting life of rotary machine and determining repair timing of rotary machine'20056,772,045'System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device'20046,713,824'Reliable semiconductor device and method of manufacturing the same'20046,329,303'Thin film forming method, thin film forming apparatus and method for manufacturing semiconductor device'20016,171,977'Semiconductor device applied to composite insulative film manufacturing method thereof'20016,163,050'Semiconductor device having insulation film whose breakdown voltage is improved and its manufacturing method'20006,093,243'Semiconductor device and its fabricating method'20006,066,872'Semiconductor device and its fabricating method'20005,879,447'Semiconductor device and its fabricating method'19995,838,056'Semiconductor device applied to composite insulative film and manufacturing method thereof'19985,766,785'Method and apparatus for manufacturing a semiconductor device'19985,746,581'Method and apparatus for evacuating vacuum system'19985,714,399'Semiconductor device having insulation film whose breakdown voltage is improved and its manufacturing method'19985,702,531'Apparatus for forming a thin film'19975,702,529'Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same'19975,637,153'Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus'19975,612,236'Method of forming a silicon semiconductor device using doping during deposition of polysilicon'19975,582,640'Semiconductor device and its fabricating method'19965,561,087'Method of forming a uniform thin film by cooling wafers during CVD'19965,380,370'Method of cleaning reaction tube'19955,378,652'Method of making a through hole in multi-layer insulating films'19955,370,371'Heat treatment apparatus'19945,316,472'Vertical boat used for heat treatment of semiconductor wafer and vertical heat treatment apparatus'19945,291,058'Semiconductor device silicon via fill formed in multiple dielectric layers'19945,286,523'Method of processing substrates and substrate processing apparatus'19945,250,463'Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate'19935,238,859'Method of manufacturing semiconductor device'19935,237,196'Semiconductor device and method for manufacturing the same'19935,234,869'Method of manufacturing silicon nitride film'19935,181,088'Vertical field effect transistor with an extended polysilicon channel region'19935,149,666'Method of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grains'19925,032,535'Method of manufacturing semiconductor device'19915,031,010'Semiconductor memory device and method of manufacturing the same'19914,966,866'Method for manufacturing semiconductor device having gate electrodes of different conductivity types'19904,931,405'Method for manufacturing a semiconductor device and suppressing the generation of bulk microdefects near the substrate surface layer'19904,721,991'Refractory silicide conductor containing iron'19884,597,159'Method of manufacturing SiO.sub.2 -Si interface for floating gate semiconductor device'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2010Patents assigned to TOSHIBA KK (43)· patent assignee history
1986–2010Based in Yokohama, JP· patent location history
1990–2000Based in Kawasaki, JP· patent location history
1994–1997Patents assigned to TOKYO ELECTRON LTD (4)· patent assignee history
1994–1998Based in Kanagawa, JP· patent location history
1998–2009Patents assigned to EBARA CORP (2)· patent assignee history
2004Based in Tsukuba, JP· patent location history
2009Patents assigned to ROHM CO LTD (1)· patent assignee history
2009Patents assigned to SANYO ELECTRIC CO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK431986–2010
TOKYO ELECTRON LTD41994–1997
EBARA CORP21998–2009
ROHM CO LTD12009
SANYO ELECTRIC CO12009
Locations
LocationPatentsSpan
Kawasaki, JP231990–2000
Yokohama, JP201986–2010
Kanagawa, JP21994–1998
Tsukuba, JP12004