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Inventor

Toshiro Hayakawa

Inventor
Nara, JP

Overview

80→
Patents
1985–2008
Patent span
Electricity
Primary field (CPC H)

Patents· 80 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light44%
B82YSpecific uses or applications of nanostructures22%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
H10DInorganic electric semiconductor devices4%
B41JTypewriters3%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
A61BDiagnosis1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
7,466,498'Exposure device'20087,226,175'Image exposure device and laser exposure device applied thereto'20077,161,611'Exposure system'20077,113,530'Gallium nitride based semiconductor laser and image exposure device'20067,104,704'Transmission apparatus using a plastic fiber'20067,095,430'Image exposing apparatus and image exposing method'20067,062,311'Fluorescence observing apparatus'20066,999,486'Semiconductor laser element and semiconductor laser'20066,977,780'Image exposure device and laser exposure device applied thereto'20056,888,875'Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatus'20056,888,165'Light-emitting diode'20056,885,687'Semiconductor laser module having optical wavelength conversion element and semiconductor laser element which includes quantum-well sublayers having different thicknesses and/or compositions'20056,874,951'Transmission apparatus using a plastic fiber'20056,876,688'Semiconductor laser and method of manufacturing the same'20056,798,804'Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulated'20046,778,573'Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layer'20046,760,057'Optical recording method, apparatus, system and medium using high-power laser light'20046,738,403'Semiconductor laser element and semiconductor laser'20046,728,285'Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection element'20046,700,912'High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the same'20046,683,324'Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition'20046,625,190'Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers'20036,594,297'Laser apparatus in which surface-emitting semiconductor is excited with semiconduct laser element and high-order oscillation modes are suppressed'20036,567,444'High-power semiconductor laser device in which near-edge portions of active layer are removed'20036,560,264'Stripe type semiconductor light emitting element having InGaN active layer, combined with optical resonator including wavelength selection element'20036,433,345'Fluorescence observing apparatus'20026,362,515'GaN substrate including wide low-defect region for use in semiconductor element'20026,167,071'Semiconductor laser'20005,917,577'Image exposing device'19995,856,994'Laser-diode-pumped solid-state laser using index-guided type multi-transverse mode broad area laser'19995,684,824'Semiconductor light emitting device'19975,608,743'Semiconductor light emitting device'19975,299,219'Stripe-type laser diode used as a light source'19945,289,484'Laser diode'19945,263,040'Strained quantum well laser diode'19935,260,959'Narrow beam divergence laser diode'1993RE034356'Semiconductor laser array'19935,196,369'Method of producing a light emitting diode array device'19935,105,236'Heterojunction light-emitting diode array'19925,084,892'Wide gain region laser diode'19925,033,043'Optical head apparatus for optical disks'19915,022,036'Semiconductor laser device'19915,006,907'Crosstalk preventing laser diode array'19915,001,522'Optical semiconductor device'19914,941,024'Semiconductor apparatus'19904,916,708'Semiconductor light-emitting devices'19904,907,239'Semiconductor laser device'19904,905,246'Semiconductor laser device'19904,901,326'Semiconductor laser device'19904,899,349'Semiconductor laser device'19904,894,836'Semiconductor device'19904,890,293'Semiconductor laser device'19894,887,274'Deterioration-resistant superlattice semiconductor laser device'19894,862,470'Semiconductor laser device'19894,860,297'Quantum well semiconductor laser device'19894,852,111'Semiconductor laser device'19894,845,724'Semiconductor laser device having optical guilding layers of unequal resistance'19894,841,533'Semiconductor laser device having a graded index waveguide'19894,835,783'Semiconductor laser'19894,824,518'Method for the production of semiconductor devices'19894,807,235'Semiconductor laser device'19894,806,994'Semiconductor device'19894,787,089'Quantum well semiconductor laser device'19884,769,822'Semiconductor laser device'19884,761,790'Optical semiconductor device'19884,759,024'Semiconductor laser device having an oscillation wavelength in the visible short-wavelength region'19884,750,183'Semiconductor laser device'19884,746,181'Optical semiconductor device'19884,745,612'Separate confinement heterostructure semiconductor laser device'19884,737,959'Semiconductor laser array device'19884,723,253'Semiconductor laser array'19884,720,833'Semiconductor laser apparatus'19884,693,207'Apparatus for the growth of semiconductor crystals'19874,694,460'Stripe geometry semiconductor laser device'19874,691,214'Optical semiconductor apparatus'19874,637,029'Semiconductor laser'19874,592,060'Semiconductor laser with active layer having reduced stress'19864,569,721'Method for the production of semiconductor lasers'19864,567,060'Method of producing a semiconductor laser device'19864,545,057'Window structure of a semiconductor laser'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–1991Patents assigned to SHARP KK (37)· patent assignee history
1985–1993Based in Nara, JP· patent location history
1989–1994Based in Yokohama, JP· patent location history
1990–1994Patents assigned to EASTMAN KODAK CO (10)· patent assignee history
1990–1992Based in Tokyo, JP· patent location history
1997–2007Patents assigned to FUJI PHOTO FILM CO LTD (30)· patent assignee history
1997–2008Based in Kanagawa, JP· patent location history
2002–2006Based in Kaisei-machi, JP· patent location history
2007–2008Patents assigned to FUJIFILM CORP (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK371985–1991
FUJI PHOTO FILM CO LTD301997–2007
EASTMAN KODAK CO101990–1994
FUJIFILM CORP22007–2008
Locations
LocationPatentsSpan
Nara, JP331985–1993
Kaisei-machi, JP192002–2006
Kanagawa, JP111997–2008
Yokohama, JP111989–1994
Tokyo, JP41990–1992