Inventor
HYOEUN PARK
Inventor
US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
B82YSpecific uses or applications of nanostructures14%
H01LSemiconductor devices14%
G01RMeasuring electric variables7%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner7%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
PatentTitleYear
12,490,502Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers202512,249,603Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same202512,211,760Integrated circuit devices including a parameter measuring structure and methods of forming the same202511,677,353Variable capacitor circuit and digitally-controlled oscillator including the same2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
2023Based in KR· patent location history
2025Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 4 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 3 | 2025 |
| KR | 1 | 2023 |