LexDanaLexDanabeta
Inventor

Kallol Bera

Inventor
San Jose, CA, US

Overview

60→
Patents
2008–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 60 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
C23CCoating metallic material10%
H05HPlasma technique8%
H01LSemiconductor devices5%
F25BRefrigeration machines, plants or systems5%
B23QDetails, components, or accessories for machine tools, e.g. arrangements for copying or controlling3%
Y10TTechnical subjects covered by former us classification3%
F28FDetails of heat-exchange and heat-transfer apparatus, of general application2%
B23BTurning1%
PatentTitleYear
11,114,284Plasma reactor with electrode array in ceiling202111,081,317Modular high-frequency source202110,903,056Plasma source for rotating susceptor202110,879,042Symmetric plasma source to generate pie shaped treatment202010,763,085Shaped electrodes for improved plasma exposure from vertical plasma source202010,685,864Contour pocket and hybrid susceptor for wafer uniformity202010,633,741Recursive inject apparatus for improved distribution of gas202010,510,515Processing tool with electrically switched electrode assembly201910,386,126Apparatus for controlling temperature uniformity of a substrate201910,273,578Top lamp module for carousel deposition chamber201910,121,655Lateral plasma/radical source201810,012,248Annular baffle20189,711,330'RF multi-feed structure to improve plasma uniformity'20179,696,097'Multi-substrate thermal management apparatus'20179,653,267'Temperature controlled chamber liner'20179,570,275'Heated showerhead assembly'20179,336,997'RF multi-feed structure to improve plasma uniformity'20169,267,742'Apparatus for controlling the temperature uniformity of a substrate'20169,248,509'Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity'20169,068,265'Gas distribution plate with discrete protective elements'20158,980,044'Plasma reactor with a multiple zone thermal control feed forward control apparatus'20158,894,805'Electron beam plasma source with profiled magnet shield for uniform plasma generation'20148,876,024'Heated showerhead assembly'20148,822,876'Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity'20148,801,893'Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor'20148,647,438'Annular baffle'20148,608,852'Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies'20138,608,900'Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes'20138,546,267'Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control'20138,512,509'Plasma reactor gas distribution plate with radially distributed path splitting manifold'20138,337,660'Capacitively coupled plasma reactor having very agile wafer temperature control'20128,329,586'Method of processing a workpiece in a plasma reactor using feed forward thermal control'20128,313,578'Etching chamber having flow equalizer and lower liner'20128,236,105'Apparatus for controlling gas flow in a semiconductor substrate processing chamber'20128,231,799'Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone'20128,221,580'Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops'20128,157,951'Capacitively coupled plasma reactor having very agile wafer temperature control'20128,092,638'Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution'20128,092,639'Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes'20128,080,479'Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator'20118,076,247'Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes'20118,034,180'Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor'20118,021,521'Method for agile workpiece temperature control in a plasma reactor using a thermal model'20118,012,304'Plasma reactor with a multiple zone thermal control feed forward control apparatus'20117,988,872'Method of operating a capacitively coupled plasma reactor with dual temperature control loops'20117,988,815'Plasma reactor with reduced electrical skew using electrical bypass elements'20117,972,467'Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor'20117,972,469'Plasma processing apparatus'20117,968,469'Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity'20117,884,025'Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources'20117,879,731'Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources'20117,846,846'Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls'20107,777,599'Methods and apparatus for controlling characteristics of a plasma'20107,754,997'Apparatus and method to confine plasma and reduce flow resistance in a plasma'20107,674,353'Apparatus to confine plasma and to enhance flow conductance'20107,618,516'Method and apparatus to confine plasma and to enhance flow conductance'20097,585,384'Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor'20097,540,971'Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content'20097,541,292'Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones'20097,431,859'Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2021Patents assigned to APPLIED MATERIALS INC (56)· patent assignee history
2008–2021Based in San Jose, CA, US· patent location history
2011–2017Patents assigned to BERA KALLOL (25)· patent assignee history
2011–2016Patents assigned to BUCHBERGER JR DOUGLAS A (15)· patent assignee history
2012–2015Patents assigned to HOFFMAN DANIEL J (12)· patent assignee history
2012–2015Patents assigned to BRILLHART PAUL LUKAS (11)· patent assignee history
2017–2021Based in Fremont, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC562008–2021
BERA KALLOLself252011–2017
BUCHBERGER JR DOUGLAS A152011–2016
HOFFMAN DANIEL J122012–2015
BRILLHART PAUL LUKAS112012–2015
Locations
LocationPatentsSpan
San Jose, California, US532008–2021
Fremont, California, US72017–2021