Inventor
CHANYUAN HU
Inventor
CN
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices35%
H10DInorganic electric semiconductor devices35%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
PatentTitleYear
11,640,910Method for cutting off FIN field effect transistor202311,637,194FinFET transistor cut etching process method202311,610,981Method for manufacturing semiconductor device202311,581,225Method for manufacturing semiconductor device202311,270,891Method for making self-aligned double pattern202211,152,263Process method for cutting polysilicon gate of FinFET transistor2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to SHANGHAI HUALI INTEGRATED CIRCUIT CORP (6)· patent assignee history
2021–2023Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHANGHAI HUALI INTEGRATED CIRCUIT CORP | 6 | 2021–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 6 | 2021–2023 |