Inventor
Kazuyoshi Torii
Inventor
Kodaira, JP
Overview
Patents· 49 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H10BElectronic memory devices15%
H01TSpark gaps13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
C22CAlloys2%
PatentTitleYear
9,935,430Spark plug20188,638,029'Spark plug for internal combustion engine and method of manufacturing the spark plug'20148,476,817'Spark plug'20138,410,673'Spark plug having a ground electrode of specific alloy composition to which a noble metal tip is joined'20138,378,560'Spark plug'20138,344,604'Spark plug for internal combustion engine'20138,294,344'Spark plug and weld metal zone'20128,098,004'Method for producing spark plug and spark plug'20128,072,125'Spark plug for use in an internal-combustion engine with a bilayer ground electrode'20118,052,495'Method for producing spark plug by projection welding and spark plug thereof'20118,044,562'Spark plug'20117,989,143'Method of manufacturing a semiconductor device having an organic thin film transistor'20117,969,520'Liquid crystal display device and dielectric film usable in the liquid crystal display device'20117,839,064'Spark plug for internal combustion engine'20107,714,489'Spark plug including ground electrode with arcuately curved face'20107,666,047'Method for securing a metal noble tip to an electrode of a spark plug using a resistance and laser welding process'20107,630,043'Liquid display device and fabrication method thereof'20097,586,554'Liquid crystal display device and dielectric film usable in the liquid crystal display device'20097,321,187'Spark plug and method for manufacturing the spark plug'20087,268,047'Semiconductor device and method for manufacturing the same'20077,119,407'Semiconductor device and manufacturing method thereof'20067,087,495'Method for manufacturing semiconductor device'20067,084,558'Spark plug and method for manufacturing the spark plug'20067,042,055'Semiconductor device and manufacturing thereof'20067,034,369'Semiconductor device and method for manufacturing the same'20066,894,334'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20056,881,657'Semiconductor device and method for manufacturing semiconductor device'20056,822,276'Memory structure with a ferroelectric capacitor'20046,800,889'Semiconductor device and fabrication method thereof'20046,787,451'Semiconductor device and manufacturing method thereof'20046,667,199'Semiconductor device having a replacement gate type field effect transistor and its manufacturing method'20036,548,847'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM'20036,462,368'Ferroelectric capacitor with a self-aligned diffusion barrier'20026,432,767'Method of fabricating semiconductor device'20026,396,092'Semiconductor device and method for manufacturing the same'20026,380,574'Ferroelectric capacitor with a self-aligned diffusion barrier'20026,342,412'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20026,338,994'Semiconductor device and method of fabricating thereof'20026,169,324'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20016,144,052'Semiconductor device and its manufacture'20006,127,255'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'20006,097,051'Semiconductor device and method of fabricating'20005,811,316'Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring'19985,780,882'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19985,739,589'Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same'19985,557,147'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19965,331,191'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'19945,270,232'Process for fabricating field effect transistor'19935,202,275'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2011Patents assigned to HITACHI LTD (21)· patent assignee history
1993–2005Patents assigned to HITACHI VLSI ENG (10)· patent assignee history
1993–2005Based in Kodaira, JP· patent location history
2000–2004Based in Hachioji, JP· patent location history
2004–2006Based in Tsukuba, JP· patent location history
2006–2018Patents assigned to NGK SPARK PLUG CO (16)· patent assignee history
2006–2013Based in Aichi, JP· patent location history
2010–2014Based in Chita-gun, JP· patent location history
2011–2014Patents assigned to TORII KAZUYOSHI (8)· patent assignee history
2012–2014Patents assigned to MUSASA MAMORU (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 21 | 1993–2011 |
| NGK SPARK PLUG CO | 16 | 2006–2018 |
| HITACHI VLSI ENG | 10 | 1993–2005 |
| TORII KAZUYOSHIself | 8 | 2011–2014 |
| MUSASA MAMORU | 6 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kodaira, JP | 15 | 1993–2005 |
| Aichi, JP | 12 | 2006–2013 |
| Hachioji, JP | 6 | 2000–2004 |
| Tsukuba, JP | 5 | 2004–2006 |
| Chita-gun, JP | 3 | 2010–2014 |