Inventor

David P. Bour

Inventor

Cupertino, CA, US

Overview

1991–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 151 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light18%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

B82YSpecific uses or applications of nanostructures15%

H10HInorganic light-emitting semiconductor devices having potential barriers14%

H01LSemiconductor devices13%

H10DInorganic electric semiconductor devices13%

C30BSingle-crystal growth3%

C23CCoating metallic material2%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

G02BOptical elements, systems or apparatus1%

PatentTitleYear

10,923,626LED sidewall processing to mitigate non-radiative recombination2021 10,734,542Light emitting diode with displaced P-type doping2020 10,714,655LED structures for reduced non-radiative sidewall recombination2020 10,490,691Light emitting diode with displaced P-type doping2019 10,446,712LED structures for reduced non-radiative sidewall recombination2019 10,418,519LED sidewall processing to mitigate non-radiative recombination2019 10,319,829Method and system for in-situ etch and regrowth in gallium nitride based devices2019 10,193,013LED structures for reduced non-radiative sidewall recombination2019 10,103,288Transfer chamber metrology for improved device yield2018 9,865,772'LED structures for reduced non-radiative sidewall recombination'2018 9,834,860Method of high growth rate deposition for group III/V materials2017 9,601,659'LED structures for reduced non-radiative sidewall recombination'2017 9,502,544'Method and system for planar regrowth in GaN electronic devices'2016 9,484,492'LED structures for reduced non-radiative sidewall recombination'2016 9,450,112'GaN-based Schottky barrier diode with algan surface layer'2016 9,397,186'Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back'2016 9,368,582'High power gallium nitride electronics using miscut substrates'2016 9,330,918'Edge termination by ion implantation in gallium nitride'2016 9,324,844'Method and system for a GaN vertical JFET utilizing a regrown channel'2016 9,318,331'Method and system for diffusion and implantation in gallium nitride based devices'2016 9,287,389'Method and system for doping control in gallium nitride based devices'2016 9,269,793'Method and system for a gallium nitride self-aligned vertical MESFET'2016 9,224,828'Method and system for floating guard rings in gallium nitride materials'2015 9,196,679'Schottky diode with buried layer in GaN materials'2015 9,184,305'Method and system for a GAN vertical JFET utilizing a regrown gate'2015 9,171,923'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'2015 9,171,751'Method and system for fabricating floating guard rings in GaN materials'2015 9,171,937'Monolithically integrated vertical JFET and Schottky diode'2015 9,159,784'Aluminum gallium nitride etch stop layer for gallium nitride based devices'2015 9,136,116'Method and system for formation of P-N junctions in gallium nitride based electronics'2015 9,127,364'Reactor clean'2015 9,123,533'Method and system for in-situ etch and regrowth in gallium nitride based devices'2015 9,117,839'Method and system for planar regrowth in GAN electronic devices'2015 9,093,284'Aluminum gallium nitride etch stop layer for gallium nitride based devices'2015 9,093,395'Method and system for local control of defect density in gallium nitride based electronics'2015 9,076,827'Transfer chamber metrology for improved device yield'2015 9,059,199'Method and system for a gallium nitride vertical transistor'2015 8,969,912'Method and system for a GaN vertical JFET utilizing a regrown channel'2015 8,969,994'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back'2015 8,946,788'Method and system for doping control in gallium nitride based devices'2015 8,941,117'Monolithically integrated vertical JFET and Schottky diode'2015 8,933,532'Schottky diode with buried layer in GaN materials'2015 8,927,999'Edge termination by ion implantation in GaN'2015 8,910,644'Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas'2014 8,866,147'Method and system for a GaN self-aligned vertical MESFET'2014 8,853,063'Method and system for carbon doping control in gallium nitride based devices'2014 8,846,482'Method and system for diffusion and implantation in gallium nitride based devices'2014 8,836,071'Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer'2014 8,778,788'Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode'2014 8,749,015'Method and system for fabricating floating guard rings in GaN materials'2014 8,643,134'GaN-based Schottky barrier diode with field plate'2014 8,592,298'Fabrication of floating guard rings using selective regrowth'2013 8,592,938'GaN-based Schottky barrier diode with field plate'2013 8,569,153'Method and system for carbon doping control in gallium nitride based devices'2013 8,571,817'Integrated vapor delivery systems for chemical vapor deposition precursors'2013 8,558,242'Vertical GaN-based metal insulator semiconductor FET'2013 8,502,234'Monolithically integrated vertical JFET and Schottky diode'2013 8,470,619'Selective decomposition of nitride semiconductors to enhance LED light extraction'2013 D0664170'Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass'2012 8,124,993'Selective decomposition of nitride semiconductors to enhance LED light extraction'2012 8,023,544'Semiconductor light emitting devices with non-epitaxial upper cladding'2011 8,000,366'Laser diode with high indium active layer and lattice matched cladding layer'2011 7,941,024'Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD'2011 7,872,272'Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact'2011 7,856,040'Semiconductor light emitting devices with non-epitaxial upper cladding'2010 7,851,242'Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells'2010 7,847,297'Ohmic contact on p-type GaN'2010 7,759,689'Photonic crystal structures and methods of making and using photonic crystal structures'2010 7,749,782'Laser roughening to improve LED emissions'2010 7,674,352'System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus'2010 7,656,919'Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth'2010 7,638,810'GaN laser with refractory metal ELOG masks for intracavity contact'2009 7,585,769'Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE'2009 7,575,982'Stacked-substrate processes for production of nitride semiconductor structures'2009 7,560,364'Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films'2009 7,502,405'Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth'2009 7,502,401'VCSEL system with transverse P/N junction'2009 7,495,314'Ohmic contact on p-type GaN'2009 7,473,941'Structures for reducing operating voltage in a semiconductor device'2009 7,470,599'Dual-side epitaxy processes for production of nitride semiconductor structures'2008 7,459,380'Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films'2008 7,443,561'Deep quantum well electro-absorption modulator'2008 7,440,666'Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD'2008 7,399,653'Nitride optoelectronic devices with backside deposition'2008 7,374,960'Stress measurement and stress balance in films'2008 7,364,991'Buffer-layer treatment of MOCVD-grown nitride structures'2008 7,358,523'Method and structure for deep well structures for long wavelength active regions'2008 7,352,788'Nitride semiconductor vertical cavity surface emitting laser'2008 7,349,456'Gain-coupled distributed quantum cascade laser'2008 7,345,324'Light emitting diodes with graded composition active regions'2008 7,276,390'Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same'2007 7,274,719'Buried heterostructure quantum cascade laser'2007 7,215,848'Optical isolator utilizing a micro-resonator'2007 7,184,640'Buried heterostructure device fabricated by single step MOCVD'2007 7,180,923'Laser employing a zinc-doped tunnel-junction'2007 7,177,061'Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability'2007 7,142,342'Electroabsorption modulator'2006 7,123,637'Nitride-based laser diode with GaN waveguide/cladding layer'2006 7,033,938'Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region'2006 6,967,981'Nitride based semiconductor structures with highly reflective mirrors'2005 6,955,933'Light emitting diodes with graded composition active regions'2005 6,931,044'Method and apparatus for improving temperature performance for GaAsSb/GaAs devices'2005 6,878,970'Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells'2005 6,878,959'Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice'2005 6,875,627'Structure and method for index-guided buried heterostructure AlGaInN laser diodes'2005 6,816,528'Method and structure for nitride based laser diode arrays on a conducting substrate'2004 6,813,295'Asymmetric InGaAsN vertical cavity surface emitting lasers'2004 6,807,214'Integrated laser and electro-absorption modulator with improved extinction'2004 6,771,680'Electrically-pumped, multiple active region vertical-cavity surface-emitting laser (VCSEL)'2004 6,764,926'Method for obtaining high quality InGaAsN semiconductor devices'2004 6,757,314'Structure for nitride based laser diode with growth substrate removed'2004 6,756,325'Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region'2004 6,744,800'Method and structure for nitride based laser diode arrays on an insulating substrate'2004 6,730,944'InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP'2004 6,618,413'Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure'2003 6,597,717'Structure and method for index-guided, inner stripe laser diode structure'2003 6,574,256'Distributed feedback laser fabricated by lateral overgrowth of an active region'2003 6,570,898'Structure and method for index-guided buried heterostructure AlGalnN laser diodes'2003 6,567,443'Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes'2003 6,541,292'Method for forming an asymmetric nitride laser diode'2003 6,455,340'Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff'2002 6,448,102'Method for nitride based laser diode with growth substrate removed'2002 6,430,202'Structure and method for asymmetric waveguide nitride laser diode'2002 6,389,051'Structure and method for asymmetric waveguide nitride laser diode'2002 6,365,429'Method for nitride based laser diode with growth substrate removed using an intermediate substrate'2002 6,345,063'Algainn elog led and laser diode structures for pure blue or green emission'2002 6,288,417'Light-emitting devices including polycrystalline gan layers and method of forming devices'2001 6,285,696'Algainn pendeoepitaxy led and laser diode structures for pure blue or green emission'2001 6,233,265'AlGaInN LED and laser diode structures for pure blue or green emission'2001 6,163,557'Fabrication of group III-V nitrides on mesas'2000 6,090,300'Ion-implantation assisted wet chemical etching of III-V nitrides and alloys'2000 5,982,799'Multiple-wavelength laser diode array using quantum well band filling'1999 5,977,612'Semiconductor devices constructed from crystallites'1999 5,926,726'In-situ acceptor activation in group III-v nitride compound semiconductors'1999 5,843,802'Semiconductor laser formed by layer intermixing'1998 5,832,019'Index guided semiconductor laser biode with shallow selective IILD'1998 5,812,576'Loss-guided semiconductor lasers'1998 5,766,981'Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD'1998 5,745,517'Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD)'1998 5,717,707'Index guided semiconductor laser diode with reduced shunt leakage currents'1998 5,708,674'Semiconductor laser or array formed by layer intermixing'1998 5,509,024'Diode laser with tunnel barrier layer'1996 5,465,266'Index-guided laser on a ridged (001) substrate'1995 5,465,263'Monolithic, multiple wavelength, dual polarization laser diode arrays'1995 5,438,584'Dual polarization laser diode with quaternary material system'1995 5,412,678'Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers'1995 5,400,356'Index-guided laser on grooved (001) substrate'1995 5,396,508'Polarization switchable quantum well laser'1995 5,383,211'TM-polarized laser emitter using III-V alloy with nitrogen'1995 5,379,312'Semiconductor laser with tensile-strained etch-stop layer'1995 5,003,548'High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (.lambda.-658 nm) laser'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991Based in Robbinsville, NJ, US· patent location history

1995–2006Patents assigned to XEROX CORP (42)· patent assignee history

1995–2021Based in Cupertino, CA, US· patent location history

2006–2017Patents assigned to BOUR DAVID P (27)· patent assignee history

2013–2016Patents assigned to AVOGY INC (39)· patent assignee history

2013–2015Patents assigned to NIE HUI (21)· patent assignee history

2013–2015Patents assigned to KIZILYALLI ISIK C (20)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
XEROX CORP	42	1995–2006
AVOGY INC	39	2013–2016
BOUR DAVID Pself	27	2006–2017
NIE HUI	21	2013–2015
KIZILYALLI ISIK C	20	2013–2015

Locations

Location	Patents	Span
Cupertino, California, US	150	1995–2021
Robbinsville, New Jersey, US	1	1991