Inventor
Sangbom Kang
Inventor
Seoul, KR
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
PatentTitleYear
10,263,109Semiconductor devices including silicide regions and methods of fabricating the same201910,170,622Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same20198,906,761'Method of manufacturing for semiconductor device using expandable material'20148,835,995'Semiconductor devices including silicide regions and methods of fabricating the same'20148,772,115'Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same'20148,012,828'Recess gate transistor'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2011–2019Based in Seoul, KR· patent location history
2014Patents assigned to KANG SANGBOM (1)· patent assignee history
2014Patents assigned to KANG SUNGKWAN (1)· patent assignee history
2014Patents assigned to KIM NAM-KYU (1)· patent assignee history
2014Patents assigned to LEE BYEONGCHAN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 6 | 2011–2019 |
| KANG SANGBOMself | 1 | 2014 |
| KANG SUNGKWAN | 1 | 2014 |
| KIM NAM-KYU | 1 | 2014 |
| LEE BYEONGCHAN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 6 | 2011–2019 |