Inventor

Bryan Pu

Inventor

San Jose, CA, US

Overview

1997–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary

H01JElectric discharge tubes or discharge lamps42%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1036%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

H02NElectric machines not otherwise provided for4%

H05HPlasma technique3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

C23CCoating metallic material1%

E21BEarth or rock drilling1%

H01LSemiconductor devices1%

PatentTitleYear

10,982,500Transducer assembly for offshore drilling riser2021 10,593,520Temperature adjusting apparatus and method for a focus ring2020 8,936,696'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2015 8,609,546'Pulsed bias plasma process to control microloading'2013 8,518,282'Method of controlling etch microloading for a tungsten-containing layer'2013 8,231,799'Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone'2012 8,187,415'Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone'2012 7,879,186'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2011 7,838,430'Plasma control using dual cathode frequency mixing'2010 7,807,064'Halogen-free amorphous carbon mask etch having high selectivity to photoresist'2010 7,736,914'Plasma control using dual cathode frequency mixing and controlling the level of polymer formation'2010 7,629,255'Method for reducing microloading in etching high aspect ratio structures'2009 7,541,292'Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones'2009 7,540,971'Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content'2009 7,431,859'Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation'2008 7,432,210'Process to open carbon based hardmask'2008 7,422,654'Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor'2008 7,374,636'Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor'2008 7,316,199'Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber'2008 7,316,761'Apparatus for uniformly etching a dielectric layer'2008 6,916,399'Temperature controlled window with a fluid supply system'2005 6,829,056'Monitoring dimensions of features at different locations in the processing of substrates'2004 6,825,618'Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply'2004 6,797,639'Dielectric etch chamber with expanded process window'2004 6,787,475'Flash step preparatory to dielectric etch'2004 6,716,302'Dielectric etch chamber with expanded process window'2004 6,689,249'Shield or ring surrounding semiconductor workpiece in plasma chamber'2004 6,613,689'Magnetically enhanced plasma oxide etch using hexafluorobutadiene'2003 6,568,346'Distributed inductively-coupled plasma source and circuit for coupling induction coils to RF power supply'2003 6,513,452'Adjusting DC bias voltage in plasma chamber'2003 6,451,703'Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas'2002 6,403,491'Etch method using a dielectric etch chamber with expanded process window'2002 6,364,957'Support assembly with thermal expansion compensation'2002 6,326,307'Plasma pretreatment of photoresist in an oxide etch process'2001 6,284,093'Shield or ring surrounding semiconductor workpiece in plasma chamber'2001 6,273,022'Distributed inductively-coupled plasma source'2001 6,221,782'Adjusting DC bias voltage in plasma chamber'2001 6,113,731'Magnetically-enhanced plasma chamber with non-uniform magnetic field'2000 6,022,446'Shallow magnetic fields for generating circulating electrons to enhance plasma processing'2000 5,891,350'Adjusting DC bias voltage in plasma chambers'1999 5,843,847'Method for etching dielectric layers with high selectivity and low microloading'1998 5,740,009'Apparatus for improving wafer and chuck edge protection'1998 5,674,321'Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2015Patents assigned to APPLIED MATERIALS INC (33)· patent assignee history

1997–2015Based in San Jose, CA, US· patent location history

2009–2013Patents assigned to LAM RES CORP (3)· patent assignee history

2012–2013Patents assigned to PU BRYAN (3)· patent assignee history

2013Patents assigned to FU QIAN (2)· patent assignee history

2013Patents assigned to LEE WONCHUL (2)· patent assignee history

2020Based in Shanghai, CN· patent location history

2021Based in Sichuan, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	33	1997–2015
LAM RES CORP	3	2009–2013
PU BRYANself	3	2012–2013
FU QIAN	2	2013
LEE WONCHUL	2	2013

Locations

Location	Patents	Span
San Jose, California, US	41	1997–2015
Sichuan, CN	1	2021
Shanghai, CN	1	2020