Inventor

Shigeru Nishimatsu

Inventor

Kokubunji, JP

Overview

26→

Patents

1977–1993

Patent span

Electricity

Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%

H01JElectric discharge tubes or discharge lamps20%

C23CCoating metallic material14%

G01NInvestigating or analysing materials by determining their chemical or physical properties8%

C30BSingle-crystal growth6%

H10BElectronic memory devices6%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

B23KSoldering or unsoldering2%

C03CChemical composition of glasses, glazes or vitreous enamels2%

C23FNon-mechanical removal of metallic material from surface2%

PatentTitleYear

5,220,169'Surface analyzing method and apparatus'1993 5,140,272'Method of semiconductor surface measurment and an apparatus for realizing the same'1992 5,138,158'Surface analysis method and apparatus'1992 5,108,543'Method of surface treatment'1992 5,108,778'Surface treatment method'1992 5,028,778'Surface analysis method and a device therefor'1991 4,901,667'Surface treatment apparatus'1990 4,886,571'Surface treatment and apparatus therefor'1989 4,828,874'Laser surface treatment method and apparatus for practicing same'1989 4,705,595'Method for microwave plasma processing'1987 4,624,214'Dry-processing apparatus'1986 4,609,426'Method and apparatus for monitoring etching'1986 4,579,623'Method and apparatus for surface treatment by plasma'1986 4,559,100'Microwave plasma etching apparatus'1985 4,522,674'Surface treatment apparatus'1985 4,481,229'Method for growing silicon-including film by employing plasma deposition'1984 4,462,863'Microwave plasma etching'1984 4,451,841'Semiconductor device with multi-layered electrodes'1984 4,436,581'Uniform etching of silicon (doped and undoped) utilizing ions'1984 4,433,228'Microwave plasma source'1984 4,430,138'Microwave plasma etching apparatus having fan-shaped discharge'1984 4,361,949'Process for making a memory device'1982 4,330,384'Process for plasma etching'1982 4,298,419'Dry etching apparatus'1981 4,270,262'Semiconductor device and process for making the same'1981 4,005,450'Insulated gate field effect transistor having drain region containing low impurity concentration layer'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1993Patents assigned to HITACHI LTD (26)· patent assignee history

1977–1993Based in Kokubunji, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	26	1977–1993

Locations

Location	Patents	Span
Kokubunji, JP	26	1977–1993