Inventor
Shu-Hsiao Tsai
Inventor
Taoyuan, TW
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H03HImpedance networks, e.g. resonant circuits16%
H10DInorganic electric semiconductor devices14%
H10NElectric solid-state devices not otherwise provided for12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G01KMeasuring temperature6%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems6%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
G01CMeasuring distances, levels or bearings4%
H03FAmplifiers2%
PatentTitleYear
10,756,625Integrated module of acoustic wave device with active thermal compensation and an active thermal compensating method thereof202010,727,741Thermal sensing acoustic wave resonator and acoustic wave filter having thermal sensing acoustic wave resonator202010,553,709Heterojunction bipolar transistor202010,498,310Protective cover for an acoustic wave device and fabrication method thereof201910,453,805Protection structure for semiconductor device package201910,298,203Protection structure for semiconductor device package201910,103,624Thermal sensor circuit20189,998,087Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device20189,991,198Layout method for compound semiconductor integrated circuits20189,911,837'Heterojunction bipolar transistor'20189,905,610'Integrated structures of acoustic wave device and varactor, and acoustic wave device, varactor and power amplifier, and fabrication methods thereof'20189,653,516'Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device, and fabrication methods thereof'20179,356,127'Layout structure of heterojunction bipolar transistors'20169,087,923'Monolithic compound semiconductor structure'20159,019,028'Integrated epitaxial structure for compound semiconductor devices'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2020Patents assigned to WIN SEMICONDUCTORS CORP (14)· patent assignee history
2015Patents assigned to WIN SMICONDUTOR CORP (1)· patent assignee history
2015–2018Based in Tao Yuan Shien, TW· patent location history
2018–2020Patents assigned to WIN SEMICONDUCTOR CORP (2)· patent assignee history
2018–2020Based in Taoyuan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| WIN SEMICONDUCTORS CORP | 14 | 2015–2020 |
| WIN SEMICONDUCTOR CORP | 2 | 2018–2020 |
| WIN SMICONDUTOR CORP | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taoyuan, TW | 9 | 2018–2020 |
| Tao Yuan Shien, TW | 6 | 2015–2018 |