LexDanaLexDanabeta
Inventor

Fumiki Aiso

Inventor
Kuwana, JP

Overview

41→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 41 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices26%
H10BElectronic memory devices25%
H01LSemiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C23CCoating metallic material6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B25JManipulators2%
H10NElectric solid-state devices not otherwise provided for2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
B08BCleaning in general1%
PatentTitleYear
10,854,488Wafer conveying apparatus and wafer conveying method202010,669,621Vaporization system202010,403,531Semiconductor manufacturing apparatus with supporting columns and tables201910,283,517Semiconductor memory device and method of manufacturing the same201910,186,521Semiconductor device and method for manufacturing semiconductor device20199,920,427'Semiconductor manufacturing apparatus and manufacturing method of semiconductor device'20189,793,290'Method of manufacturing semiconductor memory device having charge accumulation layer positioned between control gate electrode and semiconductor layer'20179,754,954'Non-volatile memory device'20179,735,171'Semiconductor memory device and method of manufacturing the same'20179,728,552'Semiconductor memory device having voids between word lines and a source line'20179,695,512'Semiconductor manufacturing system and semiconductor manufacturing method'20179,566,620'Semiconductor manufacturing apparatus and method for cleaning same'20179,478,416'Semiconductor manufacturing apparatus and method of manufacturing semiconductor device'20169,406,691'Non-volatile memory device'20169,263,319'Semiconductor memory device and method for manufacturing the same'20169,224,874'Semiconductor storage device'20159,166,032'Non-volatile memory device'20159,142,561'Nonvolatile semiconductor memory device and method for manufacturing same'20159,123,747'Nonvolatile semiconductor memory device and manufacturing method thereof'20159,012,973'Semiconductor memory device and method for manufacturing the same'20158,618,603'Nonvolatile semiconductor memory device and method for manufacturing same'20138,546,786'Stacked multiple cell nonvolatile memory device'20138,530,957'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,415,242'Nonvolatile semiconductor memory device and method of manufacturing the same'20138,247,857'Nonvolatile semiconductor memory device and method for manufacturing same'20128,115,245'Nonvolatile memory device'20128,053,286'Method of forming semiconductor device including trench gate structure'20117,986,000'Semiconductor device and method of manufacturing the same'20117,906,809'Semiconductor device having an elevated source/drain structure of varying cross-section'20117,863,166'Method of manufacturing semiconductor storage device'20117,858,508'Semiconductor device and method of manufacturing the same'20107,842,564'Semiconductor memory device manufacturing method and semiconductor memory device'20107,651,930'Method of manufacturing semiconductor storage device'20107,482,235'Semiconductor device and method of manufacturing the same'20097,470,961'Semiconductor device and method of manufacturing the same'20087,351,654'Semiconductor device and method for producing the same'20086,376,328'Method for producing capacitor elements, and capacitor element'20026,146,966'Process for forming a capacitor incorporated in a semiconductor device'20006,040,236'Method for manufacturing silicon thin film conductive element'20005,959,326'Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration'19995,858,852'Fabrication process of a stack type semiconductor capacitive element'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2002Patents assigned to NEC CORP (5)· patent assignee history
1999–2011Based in Tokyo, JP· patent location history
2008–2011Patents assigned to ELPIDA MEMORY INC (6)· patent assignee history
2010–2017Patents assigned to TOSHIBA KK (22)· patent assignee history
2010–2011Based in Yokohama, JP· patent location history
2012–2013Patents assigned to AISO FUMIKI (5)· patent assignee history
2012–2017Based in Kanagawa, JP· patent location history
2013–2015Based in Mie, JP· patent location history
2015–2020Based in Kuwana, JP· patent location history
2017–2020Patents assigned to TOSHIBA MEMORY CORP (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK222010–2017
TOSHIBA MEMORY CORP82017–2020
ELPIDA MEMORY INC62008–2011
AISO FUMIKIself52012–2013
NEC CORP51999–2002
Locations
LocationPatentsSpan
Kuwana, JP162015–2020
Tokyo, JP111999–2011
Kanagawa, JP52012–2017
Mie, JP52013–2015
Yokohama, JP42010–2011