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Inventor

Richard B. Merrill

Inventor
Woodside, CA, US

Overview

109→
Patents
1978–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 109 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation32%
H04NPictorial communication, e.g. television30%
H10DInorganic electric semiconductor devices13%
H03KPulse technique4%
G11CStatic stores3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
G01RMeasuring electric variables2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%
G05FSystems for regulating electric or magnetic variables1%
PatentTitleYear
8,487,349'Method and apparatus for improving sensitivity in vertical color CMOS image sensors'20138,115,242'Pinned photodiode CMOS pixel sensor'20128,039,916'CMOS pixel sensor with depleted photocollectors and a depleted common node'20117,834,411'CMOS pixel sensor with depleted photocollectors and a depleted common node'20107,796,172'Method and apparatus for eliminating image artifacts due to defective imager columns and rows'20107,745,773'Multi-color CMOS pixel sensor with shared row wiring and dual output lines'20107,683,953'Intra-pixel fixed-pattern-noise cancellation circuit and method'20107,602,430'High-gain multicolor pixel sensor with reset noise cancellation'20097,541,627'Method and apparatus for improving sensitivity in vertical color CMOS image sensors'20097,502,066'Methods for manufacturing and testing image sensing devices'20097,339,216'Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer'20087,166,880'Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group'20077,164,444'Vertical color filter detector group with highlight detector'20077,132,724'Complete-charge-transfer vertical color filter detector'20067,110,028'Electronic shutter using buried layers and active pixel sensor and array employing same'20066,998,660'Vertical color filter sensor group array that emulates a pattern of single-layer sensors with efficient use of each sensor group\'s sensors'20066,965,102'Large dynamic range, low-leakage vertical color pixel sensor'20056,960,757'Simplified wiring schemes for vertical color filter pixel sensors'20056,940,551'Active pixel sensor with noise cancellation'20056,937,025'Method and circuit employing current sensing to read a sensor'20056,934,050'Method for storing and retrieving data from an imaging array of vertical-color-filter detector groups'20056,930,336'Vertical-color-filter detector group with trench isolation'20056,914,314'Vertical color filter sensor group including semiconductor other than crystalline silicon and method for fabricating same'20056,905,929'Single poly EPROM cell having smaller size and improved data retention compatible with advanced CMOS process'20056,894,265'Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same'20056,882,367'High-sensitivity storage pixel sensor having auto-exposure detection'20056,864,557'Vertical color filter detector group and array'20056,841,816'Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group'20056,833,871'Exposure control in electronic cameras by detecting overflow from active pixels'20046,809,768'Double slope pixel sensor and array'20046,760,070'High-sensitivity storage pixel sensor array having auto-exposure detection'20046,750,489'Isolated high voltage PMOS transistor'20046,741,283'Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications'20046,731,397'Method for storing and retrieving digital image data from an imaging array'20046,727,521'Vertical color filter detector group and array'2004RE038499'Two-stage amplifier for active pixel sensor cell array for reducing fixed pattern noise in the array output'20046,697,114'Triple slope pixel sensor and arry'20046,636,261'Driven capacitor storage pixel sensor and array'20036,632,701'Vertical color filter detector group and array'20036,525,304'Circuitry for converting analog signals from pixel sensor to a digital and for storing the digital signal'20036,512,544'Storage pixel sensor and array with compression'20036,512,858'Image scanning circuitry with row and column addressing for use in electronic cameras'20036,509,606'Single poly EPROM cell having smaller size and improved data retention compatible with advanced CMOS process'20036,476,372'CMOS active pixel sensor using native transistors'20026,452,633'Exposure control in electronic cameras by detecting overflow from active pixels'20026,410,899'Active pixel sensor with bootstrap amplification and reduced leakage during readout'20026,369,853'Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications'20026,326,314'Integrated inductor with filled etch'20016,297,689'Low temperature coefficient low power programmable CMOS voltage reference'20016,246,043'Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process'20016,242,728'CMOS active pixel sensor using native transistors'20016,211,510'Active pixel sensor with bootstrap amplification'20016,180,983'High-voltage MOS transistor on a silicon on insulator wafer'20016,175,268'MOS switch that reduces clock feedthrough in a switched capacitor circuit'20016,160,282'CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance'20006,150,683'CMOS-based color pixel with reduced noise in the blue signal'20006,137,127'Low leakage active pixel using spacer protective mask compatible with CMOS process'20006,130,713'CMOS active pixel cell with self reset for improved dynamic range'20006,097,022'Active pixel sensor with bootstrap amplification'20006,069,376'Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications'20006,066,510'Method for forming a photodiode with improved photoresponse behavior'20006,054,704'Driven capacitor storage pixel sensor and array'20006,018,365'Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells'20006,011,295'Neural network active pixel cell'20006,002,432'Method for operating an active pixel sensor cell that reduces noise in the photo information extracted from the cell'19995,982,012'Pixel cells and pixel cell arrays having low leakage and improved performance characteristics'19995,970,316'Method of making active pixel sensor cell that minimizes leakage current'19995,969,514'Digital feedback power supply'19995,965,875'Color separation in an active pixel cell imaging array using a triple-well structure'19995,962,844'Active pixel image cell with embedded memory and pixel level signal processing capability'19995,923,202'Input/output overvoltage containment circuit for improved latchup protection'19995,923,369'Active pixel sensor cell with differential amplifier and array including same'19995,918,141'Method of masking silicide deposition utilizing a photoresist mask'19995,917,547'Two-stage amplifier for active pixel sensor cell array for reducing fixed pattern noise in the array output'19995,900,657'MOS switch that reduces clock feed through in a switched capacitor circuit'19995,899,714'Fabrication of semiconductor structure having two levels of buried regions'19995,892,253'Active pixel sensor cell with balanced blue response and reduced noise'19995,892,541'Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells'19995,889,315'Semiconductor structure having two levels of buried regions'19995,886,393'Bonding wire inductor for use in an integrated circuit package and method'19995,883,010'Method for protecting nonsilicided surfaces from silicide formation using spacer oxide mask'19995,880,460'Active pixel sensor cell that reduces noise in the photo information extracted from the cell'19995,854,498'Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell'19985,844,299'Integrated inductor'19985,841,158'Low-stress photodiode with reduced junction leakage'19985,841,176'Active pixel sensor cell that minimizes leakage current'19985,789,774'Active pixel sensor cell that minimizes leakage current'19985,786,617'High voltage charge pump using low voltage type transistors'19985,773,864'CMOS interface circuit formed in silicon-on-insulator substrate'19985,747,840'Photodiode with improved photoresponse behavior'19985,721,425'Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell'19985,710,446'Active pixel sensor cell that utilizes a parasitic transistor to reset the photodiode of the cell'19985,705,846'CMOS-compatible active pixel image array using vertical pnp cell'19985,650,745'MOSFET IC with on-chip protection against oxide damage caused by plasma-induced electrical charges'19975,622,885'Method for fabricating transistors in isolation regions in a substrate'19975,614,744'CMOS-based, low leakage active pixel array with anti-blooming isolation'19975,610,433'Multi-turn, multi-level IC inductor with crossovers'19975,475,335'High voltage cascaded charge pump'19955,397,941'Interface circuits between powered down devices and a bus'19955,397,934'Apparatus and method for adjusting the threshold voltage of MOS transistors'19955,319,259'Low voltage input and output circuits with overvoltage protection'19945,296,409'Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process'19945,276,350'Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits'19945,276,582'ESD protection using npn bipolar transistor'19945,239,440'Electrostatic discharge protection for integrated circuits'19935,095,267'Method of screening A.C. performance characteristics during D.C. parametric test operation'19925,039,602'Method of screening A.C. performance characteristics during D.C. parametric test operation'19914,326,192'Sequential successive approximation analog-to-digital converter'19824,130,894'Loop organized serial-parallel-serial memory storage system'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–1982Patents assigned to IBM (2)· patent assignee history
1991–2005Patents assigned to NAT SEMICONDUCTOR CORP (34)· patent assignee history
1991–2000Based in Daly City, CA, US· patent location history
1998–2000Patents assigned to FOVEONICS INC (14)· patent assignee history
1998–2013Based in Woodside, CA, US· patent location history
1999–2013Patents assigned to FOVEON INC (59)· patent assignee history
1999–2000Based in San Mateo, CA, US· patent location history
2004Based in Santa Clara, CA, US· patent location history
2009Based in Redwood City, CA, US· patent location history
2012–2013Patents assigned to MERRILL RICHARD B (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FOVEON INC591999–2013
NAT SEMICONDUCTOR CORP341991–2005
FOVEONICS INC141998–2000
IBM21978–1982
MERRILL RICHARD Bself22012–2013
Locations
LocationPatentsSpan
Woodside, California, US731998–2013
Daly City, California, US291991–2000
San Mateo, California, US21999–2000
Redwood City, California, US12009
Santa Clara, California, US12004