Inventor
Hirotada Kuriyama
Inventor
Hyogo, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices38%
H10DInorganic electric semiconductor devices27%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
G11CStatic stores10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H03KPulse technique1%
H04MTelephonic communication1%
H04WWireless communication networks1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
PatentTitleYear
7,321,152'Thin-film transistor and method of fabricating the same'20087,187,040'Thin-film transistor and method of fabricating the same'20077,112,854'Thin-film transistor and method of fabricating the same'20066,882,006'Semiconductor device and method of manufacturing the same'20056,703,953'Semiconductor device, method of manufacturing semiconductor device and communication method'20046,657,885'Static semiconductor memory device'20036,563,165'Non-volatile semiconductor memory device and method for producing the same'20036,501,178'Semiconductor device'20026,441,448'Semiconductor storage device'20026,420,751'Semiconductor device and method of manufacturing the same'20026,383,860'Semiconductor device and method of manufacturing the same'20026,359,804'Static semiconductor memory cell formed in an n-well and p-well'20026,303,425'Semiconductor device and method of manufacturing the same'20016,255,719'Semiconductor device including thermal neutron absorption material'20016,242,786'SOI Semiconductor device with field shield electrode'20016,150,688'Semiconductor device and method of manufacturing the same'20006,127,209'Semiconductor device and method of manufacturing the same'20006,030,548'SRAM memory device having reduced size'2000RE036531'Semiconductor memory device including memory cells connected to a ground line'20005,994,735'Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof'19995,994,719'SRAM semiconductor device'19995,981,990'Semiconductor memory device, method of manufacturing the same and method of using the same'19995,945,715'Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same'19995,886,388'Static semiconductor memory device and manufacturing method thereof'19995,859,444'Semiconductor device'19995,841,153'SRAM semiconductor device'19985,838,609'Integrated semiconductor device having negative resistance formed of MIS switching diode'19985,818,080'Semiconductor memory device including a memory cell region of six transistors'19985,780,888'Semiconductor device with storage node'19985,774,393'Semiconductor memory device capable of operating at high speed and stably even low power supply voltage'19985,717,240'Static semiconductor memory device'19985,689,458'Semiconductor memory device having negative resistance element operated stably with single low power source'19975,673,230'Semiconductor memory device capable of operating at high speed and stably even under low power supply voltage'19975,627,390'Semiconductor device with columns'19975,619,056'SRAM semiconductor device'19975,596,212'Semiconductor memory device and a manufacturing method of the same'19975,550,390'Semiconductor device and manufacturing method thereof'19965,517,038'Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration'19965,463,576'Semiconductor memory device including memory cells connected to a ground line'19955,384,731'SRAM memory structure and manufacturing method thereof'19955,379,247'Semiconductor memory device including memory cells connected to a ground line'19955,341,327'Static random access type semiconductor memory device'19944,811,155'Protection circuit for a semiconductor integrated circuit having bipolar transistors'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2003Patents assigned to MITSUBISHI ELECTRIC CORP (38)· patent assignee history
1989–2005Based in Hyogo, JP· patent location history
1996Based in Itami, JP· patent location history
2002–2008Based in Tokyo, JP· patent location history
2004–2008Patents assigned to RENESAS TECH CORP (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 38 | 1989–2003 |
| RENESAS TECH CORP | 5 | 2004–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hyogo, JP | 35 | 1989–2005 |
| Tokyo, JP | 7 | 2002–2008 |
| Itami, JP | 1 | 1996 |