Inventor
Qiangfei Xia
Inventor
Palo Alto, CA, US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for18%
H10BElectronic memory devices14%
H01LSemiconductor devices10%
B82YSpecific uses or applications of nanostructures7%
G01NInvestigating or analysing materials by determining their chemical or physical properties7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
G11CStatic stores5%
H10DInorganic electric semiconductor devices5%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems4%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light4%
PatentTitleYear
11,126,403True random number generator (TRNG) circuit using a diffusive memristor202110,740,672Capacitative artificial neural networks202010,741,759Diffusive memristor and device for synaptic emulator202010,580,679Method of transfer printing and articles manufactured therefrom202010,186,660Memristor device20199,998,106Memristive RF switches20189,871,077'Resistive memory device with semiconductor ridges'20189,068,921'Analyzer and method for sensing using the same'20158,879,300'Switchable two-terminal devices with diffusion/drift species'20148,780,344'Waveguides configured with arrays of features for performing Raman spectroscopy'20148,575,585'Memristive device'20138,525,146'Electrical circuit component'20138,445,884'Memristor with nanostructure electrodes'20138,431,474'Three dimensional multilayer circuit'20138,330,952'Guided mode resonator based Raman enhancement apparatus'20128,270,200'Nanoscale three-terminal switching device'20128,207,593'Memristor having a nanostructure in the switching material'20128,134,702'Optical devices for surface enhanced Raman spectroscopy'20128,111,393'Structure for surface enhanced Raman spectroscopy'20128,107,149'Negative index material-based modulators and methods for fabricating the same'20128,093,575'Memristive device with a bi-metallic electrode'20128,063,395'Memristor amorphous metal alloy electrodes'20118,008,648'Memristors with insulation elements and methods for fabricating the same'20117,965,388'Structure for surface enhanced raman spectroscopy'20117,700,498'Self-repair and enhancement of nanostructures by liquification under guiding conditions'20107,282,456'Self-repair and enhancement of nanostructures by liquification under guiding conditions'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2010Based in Princeton, NJ, US· patent location history
2011–2015Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (17)· patent assignee history
2011–2015Patents assigned to XIA QIANGFEI (15)· patent assignee history
2011–2014Patents assigned to YANG JIANHUA (7)· patent assignee history
2011–2014Based in Palo Alto, CA, US· patent location history
2011–2015Based in Sunnyvale, CA, US· patent location history
2012–2015Patents assigned to WU WEI (8)· patent assignee history
2012–2013Based in Menlo Park, CA, US· patent location history
2018–2021Patents assigned to UNIV MASSACHUSETTS (7)· patent assignee history
2018–2021Based in Amherst, MA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HEWLETT PACKARD DEVELOPMENT CO | 17 | 2011–2015 |
| XIA QIANGFEIself | 15 | 2011–2015 |
| WU WEI | 8 | 2012–2015 |
| UNIV MASSACHUSETTS | 7 | 2018–2021 |
| YANG JIANHUA | 7 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 11 | 2011–2014 |
| Amherst, Massachusetts, US | 7 | 2018–2021 |
| Sunnyvale, California, US | 3 | 2011–2015 |
| Menlo Park, California, US | 3 | 2012–2013 |
| Princeton, New Jersey, US | 2 | 2007–2010 |