Inventor
Jozef Brcka
Inventor
Loundonville, NY, US
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps42%
C23CCoating metallic material27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
B03CMagnetic or electrostatic separation of solid materials from solid materials or fluids3%
C12MApparatus for enzymology or microbiology3%
A61FFilters implantable into blood vessels2%
H01LSemiconductor devices2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
A61PSpecific therapeutic activity of chemical compounds or medicinal preparations1%
B08BCleaning in general1%
PatentTitleYear
10,672,596Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source202010,431,425Poly-phased inductively coupled plasma source201910,413,913Methods and systems for dielectrophoresis (DEP) separation201910,066,293Method of cleaning the filament and reactor's interior in FACVD20189,228,261'System and method for tissue construction using an electric field applicator'20168,916,055'Method and device for controlling pattern and structure formation by an electric field'20148,715,455'Multi-zone gas distribution system for a treatment system'20148,480,914'Multiple gas plasma forming method and ICP source'20138,409,398'Control of ion angular distribution function at wafer surface'20138,103,492'Plasma fluid modeling with transient to stochastic transformation'20128,092,658'Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process'20128,028,655'Plasma processing system with locally-efficient inductive plasma coupling'20117,976,674'Embedded multi-inductive large area plasma source'20117,867,409'Control of ion angular distribution function at wafer surface'20117,854,213'Modulated gap segmented antenna for inductively-coupled plasma processing system'20107,810,449'Plasma processing system with locally-efficient inductive plasma coupling'20107,776,748'Selective-redeposition structures for calibrating a plasma process'20107,771,562'Etch system with integrated inductive coupling'20107,763,551'RLSA CVD deposition control using halogen gas for hydrogen scavenging'20107,749,398'Selective-redeposition sources for calibrating a plasma process'20107,744,735'Ionized PVD with sequential deposition and etching'20107,673,583'Locally-efficient inductive plasma coupling for plasma processing system'20107,651,570'Solid precursor vaporization system for use in chemical vapor deposition'20107,591,935'Enhanced reliability deposition baffle for iPVD'20097,566,477'Method for saturating a carrier gas with precursor vapor'20097,556,718'Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer'20097,464,662'Compact, distributed inductive element for large scale inductively-coupled plasma sources'20087,435,454'Plasma enhanced atomic layer deposition system and method'20087,426,900'Integrated electrostatic inductive coupling for plasma processing'20087,407,324'Method and apparatus for monitoring the thickness of a conductive coating'20087,341,959'Plasma enhanced atomic layer deposition system and method'20087,273,533'Plasma processing system with locally-efficient inductive plasma coupling'20077,132,128'Method and system for depositing material on a substrate using a solid precursor'20067,075,771'Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system'20066,946,054'Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing'20056,853,953'Method for characterizing the performance of an electrostatic chuck'20056,719,886'Method and apparatus for ionized physical vapor deposition'20046,666,982'Protection of dielectric window in inductively coupled plasma generation'20036,652,711'Inductively-coupled plasma processing system'20036,523,493'Ring-shaped high-density plasma source and method'20036,494,998'Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element'20026,474,258'Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma'20026,446,572'Embedded plasma source for plasma density improvement'20026,417,626'Immersed inductivelycoupled plasma source'20026,287,435'Method and apparatus for ionized physical vapor deposition'20016,237,526'Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2020Patents assigned to TOKYO ELECTRON LTD (45)· patent assignee history
2001–2009Based in Gilbert, AZ, US· patent location history
2005–2010Based in Mesa, AZ, US· patent location history
2006–2013Based in Loudonville, NY, US· patent location history
2008–2014Based in Loundonville, NY, US· patent location history
2012–2016Patents assigned to BRCKA JOZEF (7)· patent assignee history
2014Patents assigned to FAGUET JACQUES (1)· patent assignee history
2014Patents assigned to LEE ERIC M (1)· patent assignee history
2014Patents assigned to YUE HONGYU (1)· patent assignee history
2014–2020Based in Austin, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 45 | 2001–2020 |
| BRCKA JOZEFself | 7 | 2012–2016 |
| FAGUET JACQUES | 1 | 2014 |
| LEE ERIC M | 1 | 2014 |
| YUE HONGYU | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Loundonville, New York, US | 15 | 2008–2014 |
| Gilbert, AZ, US | 12 | 2001–2009 |
| Mesa, AZ, US | 7 | 2005–2010 |
| Austin, Texas, US | 6 | 2014–2020 |
| Loudonville, New York, US | 5 | 2006–2013 |