Inventor

Jiro Ohshima

Inventor

Kawasaki, JP

Overview

17→

Patents

1982–1995

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1037%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests21%

H10DInorganic electric semiconductor devices18%

Y10TTechnical subjects covered by former us classification3%

PatentTitleYear

5,382,549'Method of manufacturing polycrystalline silicon having columnar orientation'1995 5,102,826'Method of manufacturing a semiconductor device having a silicide layer'1992 4,975,381'Method of manufacturing super self-alignment technology bipolar transistor'1990 4,871,685'Method of manufacturing bipolar transistor with self-aligned external base and emitter regions'1989 4,853,760'Semiconductor device having insulating layer including polyimide film'1989 4,853,342'Method of manufacturing semiconductor integrated circuit device having transistor'1989 4,780,426'Method for manufacturing high-breakdown voltage semiconductor device'1988 4,766,086'Method of gettering a semiconductor device and forming an isolation region therein'1988 4,717,682'Method of manufacturing a semiconductor device with conductive trench sidewalls'1988 4,543,707'Method of forming through holes by differential etching of stacked silicon oxynitride layers'1985 4,515,642'Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby'1985 4,502,207'Wiring material for semiconductor device and method for forming wiring pattern therewith'1985 4,479,830'Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker'1984 4,426,234'Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing'1984 4,415,372'Method of making transistors by ion implantations, electron beam irradiation and thermal annealing'1983 4,404,736'Method for manufacturing a semiconductor device of mesa type'1983 4,334,349'Method of producing semiconductor device'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1989Patents assigned to TOKYO SHIBAURA ELECTRIC CO (8)· patent assignee history

1982–1989Based in Yokohama, JP· patent location history

1985–1995Patents assigned to TOSHIBA KK (9)· patent assignee history

1985–1989Based in Kawasaki, JP· patent location history

1990–1995Based in Kitakyushu, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	9	1985–1995
TOKYO SHIBAURA ELECTRIC CO	8	1982–1989

Locations

Location	Patents	Span
Kawasaki, JP	8	1985–1989
Yokohama, JP	6	1982–1989
Kitakyushu, JP	3	1990–1995