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Inventor

Gerald Zheyao Yin

Inventor
Cupertino, CA, US

Overview

88→
Patents
1989–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 88 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
H01JElectric discharge tubes or discharge lamps29%
C23CCoating metallic material14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H01FMagnets6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B08BCleaning in general3%
H05HPlasma technique2%
C23FNon-mechanical removal of metallic material from surface1%
H01LSemiconductor devices1%
PatentTitleYear
9,947,562Method and apparatus for processing semiconductor work pieces20189,230,781'Capacitive-coupled plasma processing apparatus and method for processing substrate'20169,208,998'Multi-station decoupled reactive ion etch chamber'20158,366,829'Multi-station decoupled reactive ion etch chamber'20138,336,488'Multi-station plasma reactor with multiple plasma regions'20128,297,225'Capacitive CVD reactor and methods for plasma CVD process'20127,658,800'Gas distribution assembly for use in a semiconductor work piece processing reactor'20107,503,996'Multiple frequency plasma chamber, switchable RF system, and processes using same'20097,227,244'Integrated low k dielectrics and etch stops'20077,030,335'Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression'20066,949,203'System level in-situ integrated dielectric etch process particularly useful for copper dual damascene'20056,858,153'Integrated low K dielectrics and etch stops'20056,849,193'Highly selective process for etching oxide over nitride using hexafluorobutadiene'20056,838,635'Plasma reactor with overhead RF electrode tuned to the plasma'20056,793,835'System level in-situ integrated dielectric etch process particularly useful for copper dual damascene'20046,699,399'Self-cleaning etch process'20046,669,858'Integrated low k dielectrics and etch stops'20036,613,691'Highly selective oxide etch process using hexafluorobutadiene'20036,602,434'Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window'20036,528,751'Plasma reactor with overhead RF electrode tuned to the plasma'20036,518,195'Plasma reactor using inductive RF coupling, and processes'20036,503,367'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20036,500,357'System level in-situ integrated dielectric etch process particularly useful for copper dual damascene'20026,488,807'Magnetic confinement in a plasma reactor having an RF bias electrode'20026,488,862'Etched patterned copper features free from etch process residue'20026,475,335'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20026,471,822'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20026,454,898'Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20026,440,866'Plasma reactor with heated source of a polymer-hardening precursor material'20026,402,885'Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma'20026,387,287'Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window'20026,379,575'Treatment of etching chambers using activated cleaning gas'20026,361,705'Plasma process for selectively etching oxide using fluoropropane or fluoropropylene'20026,352,049'Plasma assisted processing chamber with separate control of species density'20026,340,435'Integrated low K dielectrics and etch stops'20026,308,654'Inductively coupled parallel-plate plasma reactor with a conical dome'20016,270,687'RF plasma method'20016,270,617'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20016,251,792'Plasma etch processes'20016,248,250'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'20016,238,588'High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process'20016,218,312'Plasma reactor with heated source of a polymer-hardening precursor material'20016,189,484'Plasma reactor having a helicon wave high density plasma source'20016,183,655'Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon'20016,174,451'Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons'20016,136,211'Self-cleaning etch process'20006,120,640'Boron carbide parts and coatings in a plasma reactor'20006,074,959'Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide'20006,074,512'Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners'20006,071,372'RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls'20006,036,877'Plasma reactor with heated source of a polymer-hardening precursor material'20006,030,486'Magnetically confined plasma reactor for processing a semiconductor wafer'20006,024,826'Plasma reactor with heated source of a polymer-hardening precursor material'20006,020,686'Inductively and multi-capacitively coupled plasma reactor'20006,010,603'Patterned copper etch for micron and submicron features, using enhanced physical bombardment'20005,990,017'Plasma reactor with heated source of a polymer-hardening precursor material'19995,965,463'Silane etching process'19995,965,035'Self aligned contact etch using difluoromethane and trifluoromethane'19995,904,778'Silicon carbide composite article particularly useful for plasma reactors'19995,900,062'Lift pin for dechucking substrates'19995,897,712'Plasma uniformity control for an inductive plasma source'19995,891,348'Process gas focusing apparatus and method'19995,885,358'Gas injection slit nozzle for a plasma process reactor'19995,883,017'Compartmentalized substrate processing chamber'19995,817,534'RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers'19985,783,101'High etch rate residue free metal etch process with low frequency high power inductive coupled plasma'19985,777,289'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'19985,756,400'Method and apparatus for cleaning by-products from plasma chamber surfaces'19985,753,044'RF plasma reactor with hybrid conductor and multi-radius dome ceiling'19985,753,137'Dry cleaning of semiconductor processing chambers using non-metallic, carbon-comprising material'19985,746,875'Gas injection slit nozzle for a plasma process reactor'19985,730,801'Compartnetalized substrate processing chamber'19985,710,486'Inductively and multi-capacitively coupled plasma reactor'19985,685,916'Dry cleaning of semiconductor processing chambers'19975,676,759'Plasma dry cleaning of semiconductor processing chambers'19975,643,394'Gas injection slit nozzle for a plasma process reactor'19975,607,542'Inductively enhanced reactive ion etching'19975,573,596'Arc suppression in a plasma processing system'19965,565,681'Ion energy analyzer with an electrically controlled geometric filter'19965,556,501'Silicon scavenger in an inductively coupled RF plasma reactor'19965,540,824'Plasma reactor with multi-section RF coil and isolated conducting lid'19965,534,108'Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor'19965,486,235'Plasma dry cleaning of semiconductor processing chambers'19965,451,784'Composite diagnostic wafer for semiconductor wafer processing systems'19955,262,029'Method and system for clamping semiconductor wafers'19935,198,725'Method of producing flat ECR layer in microwave plasma device and apparatus therefor'19934,871,421'Split-phase driver for plasma etch system'19894,808,259'Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2006Based in San Jose, CA, US· patent location history
1993–2007Based in Cupertino, CA, US· patent location history
1995–2018Patents assigned to APPLIED MATERIALS INC (74)· patent assignee history
1998–2001Based in Sunnyvale, CA, US· patent location history
2009–2018Patents assigned to ADVANCED MICRO FAB EQUIP INC (7)· patent assignee history
2009–2018Based in Shanghai, CN· patent location history
2012–2018Patents assigned to YIN GERALD (5)· patent assignee history
2012–2015Patents assigned to CHEN JINYUAN (4)· patent assignee history
2012–2015Patents assigned to NI TUQIANG (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC741995–2018
ADVANCED MICRO FAB EQUIP INC72009–2018
YIN GERALDself52012–2018
CHEN JINYUAN42012–2015
NI TUQIANG42012–2015
Locations
LocationPatentsSpan
Cupertino, California, US581993–2007
San Jose, California, US131989–2006
Sunnyvale, California, US91998–2001
Shanghai, CN82009–2018