Inventor
Ki-Whan Song
Inventor
Seoul, KR
Overview
Patents· 67 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores36%
H10DInorganic electric semiconductor devices27%
H10BElectronic memory devices22%
H03KPulse technique4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G06FElectric digital data processing2%
H01HElectric switches2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%
G05FSystems for regulating electric or magnetic variables1%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
PatentTitleYear
10,593,408Nonvolatile memory device202010,170,192Nonvolatile memory device20199,342,447'Data storage system and method of operating data storage system'20169,042,167'Phase change memory'20158,982,618'Nonvolatile memory device and related method of operation'20158,861,264'Memory device, precharge controlling method thereof, and devices having the same'20148,842,484'Voltage generator, nonvolatile memory device comprising voltage generator, and method of operating voltage generator'20148,837,234'Voltage control method to minimize a coupling noise between adjacent global bit lines during read-while operation and memory device using the same'20148,772,872'Transistors, semiconductor memory cells having a transistor and methods of forming the same'20148,724,411'Memory devices and memory systems including discharge lines'20148,575,672'Nonvolatile semiconductor memory devices'20138,503,218'Nonvolatile memory device using resistance material and memory system including the nonvolatile memory device'20138,362,539'Semiconductor device and semiconductor package including the same'20138,331,162'Semiconductor memory device having hierarchical bit line structure and method of driving the semiconductor memory device'20128,274,810'Semiconductor memory device comprising transistor having vertical channel structure'20128,248,871'Redundancy circuits and semiconductor memory devices'20128,199,592'Semiconductor memory devices with mismatch cells'20128,179,736'Antifuses and program circuits having the same'20128,179,707'Semiconductor memory devices and methods of arranging memory cell arrays thereof'20128,134,202'Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristics'20128,120,979'Semiconductor memory devices having hierarchical bit-line structures'20128,058,187'Trap charge equalizing method and threshold voltage distribution reducing method'20118,054,693'Capacitorless dynamic memory device capable of performing data read/restoration and method for operating the same'20118,023,337'Semiconductor memory device'20118,009,473'Semiconductor memory device including memory cell array having memory cells using floating body transistors'20118,009,488'Semiconductor memory device'20117,990,769'Method of programming and sensing memory cells using transverse channels and devices employing same'20117,977,736'Vertical channel transistors and memory devices including vertical channel transistors'20117,969,808'Memory cell structures, memory arrays, memory devices, memory controllers, and memory systems, and methods of manufacturing and operating the same'20117,944,759'Semiconductor memory device including floating body transistor'20117,924,644'Semiconductor memory device including floating body transistor memory cell array and method of operating the same'20117,906,397'Methods of fabricating nonvolatile semiconductor memory devices including a plurality of stripes having impurity layers therein'20117,851,859'Single transistor memory device having source and drain insulating regions and method of fabricating the same'20107,843,750'Semiconductor memory device comprising transistor having vertical channel structure'20107,835,208'Multi-level dynamic memory device'20107,777,999'Electrostatic discharge (ESD) protection device'20107,741,673'Floating body memory and method of fabricating the same'20107,709,308'Semiconductor devices and methods of fabricating the same including forming a fin with first and second gates on the sidewalls'20107,701,793'Semiconductor integrated circuit and method of operating the same'20107,675,771'Capacitor-less DRAM circuit and method of operating the same'20107,633,096'Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereof'20097,633,117'Capacitorless DRAM with cylindrical auxiliary gate and fabrication method thereof'20097,619,928'Semiconductor memory device including floating body memory cells and method of operating the same'20097,595,532'Semiconductor memory devices and methods of forming the same'20097,580,314'Memory device having open bit line structure and method of sensing data therefrom'20097,577,025'Semiconductor memory device comprising floating body memory cells and related methods of operation'20097,567,452'Multi-level dynamic memory device having open bit line structure and method of driving the same'20097,564,084'Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same'20097,548,447'Semiconductor memory device and methods thereof'20097,525,146'Nonvolatile semiconductor memory devices'20097,505,302'Multi-level dynamic memory device'20097,465,633'Methods of forming field effect transistors and capacitor-free dynamic random access memory cells'20087,442,988'Semiconductor devices and methods of fabricating the same'20087,433,223'Memory devices including floating body transistor capacitorless memory cells and related methods'20087,030,673'Phase splitter circuit'20067,002,242'Ball grid array package semiconductor device having improved power line routing'20066,906,963'Semiconductor memory device having output driver for high frequency operation'20056,707,653'Semiconductor controlled rectifier for use in electrostatic discharge protection circuit'20046,580,184'Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltage'20036,384,619'Integrated circuit devices having metastability protection circuits therein'20026,366,113'Data receiver'20026,313,670'Integrated driver circuits having current control capability'20016,222,354'Charge compensator for voltage regulator'20016,184,701'Integrated circuit devices having metastability protection circuits therein'20014,752,656'Switch device for controlling the power supply to an electric heater with one heater'19884,675,478'Electric power control switch'19874,322,582'Liquid-sealed type of a governor for telephone dial'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–2020Based in Seoul, KR· patent location history
2001–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (63)· patent assignee history
2006Based in Yongin, KR· patent location history
2009–2014Based in Yongin-si, KR· patent location history
2009–2011Based in Gangnam-gu, KR· patent location history
2011–2016Patents assigned to SONG KI-WHAN (15)· patent assignee history
2011Based in Gyeonggi-do, KR· patent location history
2012–2014Patents assigned to KIM JIN-YOUNG (7)· patent assignee history
2012–2014Patents assigned to TAK NAM-KYUN (3)· patent assignee history
2014–2015Patents assigned to SONG KI WHAN (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 63 | 2001–2020 |
| SONG KI-WHANself | 15 | 2011–2016 |
| KIM JIN-YOUNG | 7 | 2012–2014 |
| SONG KI WHANself | 4 | 2014–2015 |
| TAK NAM-KYUN | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 35 | 1982–2020 |
| Yongin-si, KR | 26 | 2009–2014 |
| Gangnam-gu, KR | 3 | 2009–2011 |
| Gyeonggi-do, KR | 1 | 2011 |
| Yongin, KR | 1 | 2006 |