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Inventor

Fang-Mei Chao

Inventor
Taichung, TW

Overview

8→
Patents
2005–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 8 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices100%
PatentTitleYear
8,426,922'CMOS structure and latch-up preventing method of same'20138,415,745'ESD protection device'20138,318,559'Method of fabricating CMOS transistor'20127,977,769'ESD protection device'20117,843,012'CMOS transistor'20107,429,774'Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof'20087,190,030'Electrostatic discharge protection structure'20076,879,003'Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2013Patents assigned to UNITED MICROELECTRONICS CORP (8)· patent assignee history
2005–2013Based in Taichung, TW· patent location history
2010–2012Based in Taipei, TW· patent location history
2012–2013Patents assigned to CHAO FANG-MEI (3)· patent assignee history
2012–2013Patents assigned to CHEN MING-I (2)· patent assignee history
2013Patents assigned to CHIN YING-KO (1)· patent assignee history
2013Patents assigned to WANG YI-CHIAO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNITED MICROELECTRONICS CORP82005–2013
CHAO FANG-MEIself32012–2013
CHEN MING-I22012–2013
CHIN YING-KO12013
WANG YI-CHIAO12013
Locations
LocationPatentsSpan
Taichung, TW62005–2013
Taipei, TW22010–2012