Inventor

Scott W. Corzine

Inventor

Sunnyvale, CA, US

Overview

54→

Patents

1998–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light35%

B82YSpecific uses or applications of nanostructures18%

G02BOptical elements, systems or apparatus8%

H10HInorganic light-emitting semiconductor devices having potential barriers7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

C30BSingle-crystal growth2%

G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light2%

PatentTitleYear

8,039,869'Gallium nitride device substrate containing a lattice parameter altering element'2011 7,941,024'Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD'2011 7,778,501'Integrated circuits having photonic interconnect layers and methods for fabricating same'2010 7,720,326'Nanowire-based photodetectors'2010 7,720,264'Method and system for pupil detection for security applications'2010 7,711,213'Nanowire-based modulators'2010 7,679,098'Highly directional light emitting diode using photonic bandgap waveguides'2010 7,656,919'Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth'2010 7,638,810'GaN laser with refractory metal ELOG masks for intracavity contact'2009 7,586,614'System and method for self-referenced SPR measurements'2009 7,583,863'Method and system for wavelength-dependent imaging and detection using a hybrid filter'2009 7,573,931'Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector'2009 7,502,405'Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth'2009 7,502,401'VCSEL system with transverse P/N junction'2009 7,440,666'Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD'2008 7,352,788'Nitride semiconductor vertical cavity surface emitting laser'2008 7,349,456'Gain-coupled distributed quantum cascade laser'2008 7,273,798'Gallium nitride device substrate containing a lattice parameter altering element'2007 7,274,719'Buried heterostructure quantum cascade laser'2007 7,218,660'Single-mode vertical cavity surface emitting lasers and methods of making the same'2007 7,184,640'Buried heterostructure device fabricated by single step MOCVD'2007 7,155,131'Optical communication devices, light emission devices and optical communication methods'2006 7,142,342'Electroabsorption modulator'2006 7,116,483'Distributed bragg reflector and method of fabrication'2006 7,072,531'Gain-assisted electroabsorption modulators'2006 7,033,938'Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region'2006 6,947,217'Distributed Bragg reflector and method of fabrication'2005 6,920,253'Optical modulator based on a microdisk resonator'2005 6,853,663'Efficiency GaN-based light emitting devices'2005 6,807,214'Integrated laser and electro-absorption modulator with improved extinction'2004 6,804,271'Light emission methods and light emission devices'2004 6,756,325'Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region'2004 6,730,944'InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP'2004 6,711,195'Long-wavelength photonic device with GaAsSb quantum-well layer'2004 6,647,050'Flip-chip assembly for optically-pumped lasers'2003 6,642,516'Apparatus and method of laser dissociation for mass spectrometry'2003 6,553,051'System for optically pumping a long wavelength laser using a short wavelength laser'2003 6,526,082'P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction'2003 6,500,257'Epitaxial material grown laterally within a trench and method for producing same'2002 6,483,862'System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer'2002 6,429,466'Integrated circuit substrate that accommodates lattice mismatch stress'2002 6,259,853'Optical element having electrically controllable refractive index'2001 6,252,896'Long-Wavelength VCSEL using buried bragg reflectors'2001 6,222,202'System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation'2001 6,211,095'Method for relieving lattice mismatch stress in semiconductor devices'2001 6,188,711'Polarization-controlled VCSELs using externally applied uniaxial stress'2001 6,046,465'Buried reflectors for light emitters in epitaxial material and method for producing same'2000 5,896,408'Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets'1999 5,867,516'Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output'1999 5,838,715'High intensity single-mode VCSELs'1998 5,809,050'Integrated controlled intensity laser-based light source using diffraction, scattering and transmission'1998 5,771,254'Integrated controlled intensity laser-based light source'1998 5,761,229'Integrated controlled intensity laser-based light source'1998 5,727,014'Vertical-cavity surface-emitting laser generating light with a defined direction of polarization'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2000Patents assigned to HEWLETT PACKARD CO (8)· patent assignee history

1998–2011Based in Sunnyvale, CA, US· patent location history

2001–2009Patents assigned to AGILENT TECHNOLOGIES INC (23)· patent assignee history

2006–2011Patents assigned to AVAGO TECH FIBER IP SG PTE LTD (7)· patent assignee history

2007–2010Patents assigned to AVAGO TECH ECBU IP SG PTE LTD (6)· patent assignee history

2009–2010Patents assigned to AVAGO TECHNOLOGIES GENERAL IP (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
AGILENT TECHNOLOGIES INC	23	2001–2009
HEWLETT PACKARD CO	8	1998–2000
AVAGO TECH FIBER IP SG PTE LTD	7	2006–2011
AVAGO TECH ECBU IP SG PTE LTD	6	2007–2010
AVAGO TECHNOLOGIES GENERAL IP	4	2009–2010

Locations

Location	Patents	Span
Sunnyvale, California, US	54	1998–2011