Inventor
Karl D. Hobart
Inventor
Upper Marlboro, MD, US
Overview
Patents· 58 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H01LSemiconductor devices14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B82YSpecific uses or applications of nanostructures4%
B81BMicrostructural devices or systems, e.g. micromechanical devices2%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
C30BSingle-crystal growth2%
G01CMeasuring distances, levels or bearings2%
PatentTitleYear
11,131,039Diamond on nanopatterned substrate202110,777,644Heterojunction devices and methods for fabricating the same202010,717,642Silicon carbide microelectromechanical structure, device, and method202010,589,983Silicon carbide microelectromechanical structure, device, and method202010,424,643Diamond air bridge for thermal management of high power devices201910,343,900Material structure and method for deep silicon carbide etching201910,317,210Whole angle MEMS gyroscope on hexagonal crystal substrate201910,312,175Diamond air bridge for thermal management of high power devices201910,229,839Transition metal-bearing capping film for group III-nitride devices201910,002,958Diamond on III-nitride device20189,991,354Metal nitride alloy contact for semiconductor20189,960,266Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors20189,685,513'Semiconductor structure or device integrated with diamond'20179,490,356'Growth of high-performance III-nitride transistor passivation layer for GaN electronics'20169,466,684'Transistor with diamond gate'20169,331,163'Transistor with diamond gate'20169,305,858'Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates'20169,275,998'Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel'20169,246,305'Light-emitting devices with integrated diamond'20169,196,703'Selective deposition of diamond in thermal vias'20159,196,614'Inverted III-nitride P-channel field effect transistor with hole carriers in the channel'20159,159,641'Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates'20159,029,833'Graphene on semiconductor detector'20159,006,791'III-nitride P-channel field effect transistor with hole carriers in the channel'20158,900,939'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20148,872,159'Graphene on semiconductor detector'20148,753,468'Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates'20148,723,218'Silicon carbide rectifier'20148,648,390'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20148,445,383'Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices'20138,384,129'Transistor with enhanced channel charge inducing material layer and threshold voltage control'20138,039,301'Gate after diamond transistor'20118,008,626'Neutron detector with gamma ray isolation'20117,915,143'Method of mediating forward voltage drift in a SiC device'20117,902,513'Neutron detector with gamma ray isolation'20117,759,186'Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices'20107,535,100'Wafer bonding of thinned electronic materials and circuits to high performance substrates'20097,358,152'Wafer bonding of thinned electronic materials and circuits to high performance substrate'20087,303,969'Method of making interband tunneling diodes'20077,282,753'Vertical conducting power semiconducting devices made by deep reactive ion etching'20077,132,321'Vertical conducting power semiconductor devices implemented by deep etch'20066,856,520'Double sided IGBT phase leg architecture and clocking method for reduced turn on loss'20056,803,598'Si-based resonant interband tunneling diodes and method of making interband tunneling diodes'20046,787,885'Low temperature hydrophobic direct wafer bonding'20046,767,749'Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting'20046,607,969'Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques'20036,593,212'Method for making electro-optical devices using a hydrogenion splitting technique'20036,562,127'Method of making mosaic array of thin semiconductor material of large substrates'20036,555,451'Method for making shallow diffusion junctions in semiconductors using elemental doping'20036,497,763'Electronic device with composite substrate'20026,328,796'Single-crystal material on non-single-crystalline substrate'20016,323,108'Fabrication ultra-thin bonded semiconductor layers'20016,274,892'Devices formable by low temperature direct bonding'20016,242,324'Method for fabricating singe crystal materials over CMOS devices'20016,201,342'Automatically sharp field emission cathodes'20016,194,290'Methods for making semiconductor devices by low temperature direct bonding'20016,153,495'Advanced methods for making semiconductor devices by low temperature direct bonding'20006,113,451'Atomically sharp field emission cathodes'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2019Patents assigned to US NAVY (44)· patent assignee history
2000–2017Based in Upper Marlboro, MD, US· patent location history
2003–2009Based in UpperMarlboro, MD, US· patent location history
2005Based in Upper Falls, MD, US· patent location history
2013–2017Patents assigned to HOBART KARL D (16)· patent assignee history
2013–2017Patents assigned to KUB FRANCIS J (13)· patent assignee history
2015–2017Patents assigned to ANDERSON TRAVIS J (9)· patent assignee history
2015–2021Based in Alexandria, VA, US· patent location history
2019–2021Patents assigned to US GOV SEC NAVY (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US NAVY | 44 | 2000–2019 |
| HOBART KARL Dself | 16 | 2013–2017 |
| KUB FRANCIS J | 13 | 2013–2017 |
| ANDERSON TRAVIS J | 9 | 2015–2017 |
| US GOV SEC NAVY | 6 | 2019–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Upper Marlboro, Maryland, US | 33 | 2000–2017 |
| Alexandria, Virginia, US | 20 | 2015–2021 |
| UpperMarlboro, Maryland, US | 4 | 2003–2009 |
| Upper Falls, Maryland, US | 1 | 2005 |