Inventor
Neng-Tai Shih
Inventor
New Taipei, TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10BElectronic memory devices13%
H10DInorganic electric semiconductor devices13%
H10NElectric solid-state devices not otherwise provided for4%
H05KPrinted circuits1%
PatentTitleYear
11,062,984Methods for forming semiconductor devices202110,937,749Methods of forming microelectronic devices including dummy dice202110,818,536Microelectronic devices including redistribution layers202010,566,229Microelectronic package structures including redistribution layers202010,446,509Methods of forming and operating microelectronic devices including dummy chips201910,121,734Semiconductor device201810,043,769Semiconductor devices including dummy chips20189,916,999'Methods of fabricating a semiconductor package structure including at least one redistribution layer'20189,748,106'Method for fabricating semiconductor package'20179,520,333'Wafer level package and fabrication method thereof'20169,496,358'Semiconductor device and fabrication method therefor'20169,455,243'Silicon interposer and fabrication method thereof'20169,449,953'Package-on-package assembly and method for manufacturing the same'20169,437,583'Package-on-package assembly and method for manufacturing the same'20169,171,847'Semiconductor structure'20158,999,733'Method of forming RRAM structure'20158,901,527'Resistive random access memory structure with tri-layer resistive stack'20148,487,290'RRAM with improved resistance transformation characteristic and method of making the same'20138,455,984'Integrated circuit structure and method of forming the same'20138,395,209'Single-sided access device and fabrication method thereof'20137,993,985'Method for forming a semiconductor device with a single-sided buried strap'20117,985,998'Trench-type semiconductor device structure'20117,759,190'Memory device and fabrication method thereof'20107,449,382'Memory device and fabrication method thereof'20087,408,215'Dynamic random access memory'20087,160,804'Method of fabricating MOS transistor by millisecond anneal'20076,962,847'Method for forming a self-aligned buried strap in a vertical memory cell'20056,946,359'Method for fabricating trench isolations with high aspect ratio'20056,927,123'Method for forming a self-aligned buried strap in a vertical memory cell'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2015Patents assigned to NANYA TECHNOLOGY CORP (14)· patent assignee history
2005–2015Based in Taipei, TW· patent location history
2011Based in Taoyuan, TW· patent location history
2013–2014Patents assigned to SHIH NENG-TAI (3)· patent assignee history
2013–2014Patents assigned to WU CHANG-RONG (3)· patent assignee history
2013Based in Taoyuan County, TW· patent location history
2015–2016Patents assigned to INOTERA MEMORIES INC (6)· patent assignee history
2015–2021Based in New Taipei, TW· patent location history
2017–2021Patents assigned to MICRON TECHNOLOGY INC (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NANYA TECHNOLOGY CORP | 14 | 2005–2015 |
| MICRON TECHNOLOGY INC | 9 | 2017–2021 |
| INOTERA MEMORIES INC | 6 | 2015–2016 |
| SHIH NENG-TAIself | 3 | 2013–2014 |
| WU CHANG-RONG | 3 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| New Taipei, TW | 15 | 2015–2021 |
| Taipei, TW | 12 | 2005–2015 |
| Taoyuan County, TW | 1 | 2013 |
| Taoyuan, TW | 1 | 2011 |