Inventor

Subhendu Guha

Inventor

Troy, MI, US

Overview

1985–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation25%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution24%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

Y02PClimate change mitigation technologies in the production or processing of goods13%

C23CCoating metallic material6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

H01JElectric discharge tubes or discharge lamps3%

H10DInorganic electric semiconductor devices3%

B22FWorking metallic powder1%

B23KSoldering or unsoldering1%

PatentTitleYear

7,964,476'Method and apparatus for the laser scribing of ultra lightweight semiconductor devices'2011 7,902,049'Method for depositing high-quality microcrystalline semiconductor materials'2011 7,517,465'Ultra lightweight photovoltaic device and method for its manufacture'2009 6,875,914'Photovoltaic roofing structure'2005 6,767,762'Lightweight semiconductor device and method for its manufacture'2004 6,468,828'Method of manufacturing lightweight, high efficiency photovoltaic module'2002 6,468,829'Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates'2002 6,274,461'Method for depositing layers of high quality semiconductor material'2001 6,087,580'Semiconductor having large volume fraction of intermediate range order material'2000 5,977,476'High efficiency photovoltaic device'1999 5,719,076'Method for the manufacture of semiconductor devices with optimized hydrogen content'1998 5,569,332'Optically enhanced photovoltaic back reflector'1996 5,476,798'Plasma deposition process with substrate temperature control'1995 5,346,853'Microwave energized deposition process with substrate temperature control for the fabrication of P-I-N photovoltaic devices'1994 5,334,423'Microwave energized process for the preparation of high quality semiconductor material'1994 5,298,086'Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby'1994 5,296,045'Composite back reflector for photovoltaic device'1994 5,273,587'Igniter for microwave energized plasma processing apparatus'1993 5,256,576'Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer'1993 5,231,048'Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system\'s Paschen curve'1993 5,221,854'Protective layer for the back reflector of a photovoltaic device'1993 5,204,272'Semiconductor device and microwave process for its manufacture'1993 5,180,690'Method of forming a layer of doped crystalline semiconductor alloy material'1993 5,180,686'Method for continuously deposting a transparent oxide material by chemical pyrolysis'1993 4,891,330'Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements'1990 4,816,082'Thin film solar cell including a spatially modulated intrinsic layer'1989 4,775,425'P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same'1988 4,698,234'Vapor deposition of semiconductor material'1987 4,696,758'Gas mixtures for the vapor deposition of semiconductor material'1987 4,695,859'Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits'1987 4,637,895'Gas mixtures for the vapor deposition of semiconductor material'1987 4,609,771'Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material'1986 4,600,801'Fluorinated, p-doped microcrystalline silicon semiconductor alloy material'1986 4,555,586'Photovoltiac device having long term energy conversion stability and method of producing same'1985 4,547,621'Stable photovoltaic devices and method of producing same'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2000Patents assigned to ENERGY CONVERSION DEVICES INC (11)· patent assignee history

1985–1986Patents assigned to SOVONICS SOLAR SYSTEMS (3)· patent assignee history

1985–1987Based in Clawson, MI, US· patent location history

1987–2002Based in Troy, MI, US· patent location history

1993–2005Patents assigned to UNITED SOLAR SYSTEMS CORP (17)· patent assignee history

2002Patents assigned to SKY SOLAR L L C (1)· patent assignee history

2002–2011Based in Bloomfield Hills, MI, US· patent location history

2009–2011Patents assigned to UNITED SOLAR OVONIC LLC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
UNITED SOLAR SYSTEMS CORP	17	1993–2005
ENERGY CONVERSION DEVICES INC	11	1985–2000
SOVONICS SOLAR SYSTEMS	3	1985–1986
UNITED SOLAR OVONIC LLC	3	2009–2011
SKY SOLAR L L C	1	2002

Locations

Location	Patents	Span
Troy, MI, US	22	1987–2002
Clawson, MI, US	7	1985–1987
Bloomfield Hills, MI, US	6	2002–2011