Inventor
Srabanti Chowdhury
Inventor
Goleta, CA, US
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H03KPulse technique9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10TTechnical subjects covered by former us classification4%
C23CCoating metallic material1%
C30BSingle-crystal growth1%
PatentTitleYear
10,418,475Diamond based current aperture vertical transistor and methods of making and using the same201910,312,361Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage201910,121,657Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation201810,043,896III-Nitride transistor including a III-N depleting layer20189,893,174'III-nitride based N polar vertical tunnel transistor'20189,842,922'III-nitride transistor including a p-type depleting layer'20179,634,100'Semiconductor devices with integrated hole collectors'20179,590,088'Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer'20179,520,491'Electrodes for semiconductor devices and methods of forming the same'20169,490,324'N-polar III-nitride transistors'20169,443,938'III-nitride transistor including a p-type depleting layer'20169,443,849'Semiconductor electronic components with integrated current limiters'20169,437,707'Transistors with isolation regions'20169,224,805'Semiconductor devices with guard rings'20159,184,275'Semiconductor devices with integrated hole collectors'20159,171,730'Electrodes for semiconductor devices and methods of forming the same'20159,171,910'Semiconductor electronic components with integrated current limiters'20159,171,836'Method of forming electronic components with increased reliability'20159,147,760'Transistors with isolation regions'20159,093,366'N-polar III-nitride transistors'20158,937,338'Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer'20158,901,604'Semiconductor devices with guard rings'20148,860,495'Method of forming electronic components with increased reliability'20148,803,246'Semiconductor electronic components with integrated current limiters'20148,742,460'Transistors with isolation regions'20148,598,937'High power semiconductor electronic components with increased reliability'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2018Patents assigned to TRANSPHORM INC (20)· patent assignee history
2013–2015Patents assigned to CHOWDHURY SRABANTI (6)· patent assignee history
2013–2015Patents assigned to MISHRA UMESH (5)· patent assignee history
2013–2018Based in Goleta, CA, US· patent location history
2015–2019Patents assigned to UNIV CALIFORNIA (4)· patent assignee history
2017–2018Based in Chandler, AZ, US· patent location history
2018–2019Patents assigned to UNIV ARIZONA STATE (3)· patent assignee history
2018–2019Based in San Ramon, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TRANSPHORM INC | 20 | 2013–2018 |
| CHOWDHURY SRABANTIself | 6 | 2013–2015 |
| MISHRA UMESH | 5 | 2013–2015 |
| UNIV CALIFORNIA | 4 | 2015–2019 |
| UNIV ARIZONA STATE | 3 | 2018–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Goleta, California, US | 21 | 2013–2018 |
| San Ramon, California, US | 3 | 2018–2019 |
| Chandler, AZ, US | 2 | 2017–2018 |