Inventor
Yun-wei CHENG
Inventor
TW
Overview
Patents· 92 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation37%
H01LSemiconductor devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H04NPictorial communication, e.g. television8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10DInorganic electric semiconductor devices3%
G02BOptical elements, systems or apparatus2%
G01RMeasuring electric variables1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%
PatentTitleYear
12,598,831Pixel shielding using air gaps202612,593,147Structures and methods for phase detection auto focus202612,575,198Vertically arranged semiconductor pixel sensor202612,470,847Image sensor device and methods of formation202512,469,752Mid-manufacturing semiconductor wafer layer testing202512,471,408Semiconductor structure and method of manufacturing the same202512,457,812Semiconductor structure and method of manufacturing the same202512,446,338Method for manufacturing image sensor including forming FinFET transfer gate having a plurality of channel fins above a p-type region202512,408,464Semiconductor arrangement with isolation structure202512,407,809Pixel array including dark pixel sensors202512,400,928Heat dissipation structures202512,402,422Near infrared light sensor with improved light coupling and CMOS image sensor including same202512,396,285Integration of solar cell and image sensor202512,386,073Pixel array including time-of-flight sensors202512,382,734Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same202512,376,403Low-refractivity grid structure and method forming same202512,364,043Image sensor device202512,356,749Image sensor device202512,342,647Semiconductor arrangement and method of making202512,324,254Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same202512,324,258Image sensor with improved quantum efficiency surface structure202512,300,664Edge-trimming methods for wafer bonding and dicing202512,277,795Optical fingerprint sensor with enhanced anti-counterfeiting features202512,243,894Stacked image sensors and methods of formation202512,243,898Image sensor with high quantum efficiency202512,243,893Image sensor device202512,224,297Method of forming an image sensor having stress releasing structure202512,218,051Method of manufacturing a semiconductor device including a plurality of circuit components and array of conductive contacts202512,211,869Optical blocking structures for black level correction pixels in an image sensor202512,211,862Multi-protrusion transfer gate manufacturing method202512,191,334Semiconductor device with buffer layer and method of forming202512,176,361Electromagnetic radiation detection method202412,170,302Increased optical path for long wavelength light by grating structure202412,166,048Pixel array including octagon pixel sensors202412,164,034Pixel array including time-of-flight sensors202412,154,933Image sensors with stress adjusting layers202412,142,630Vertically arranged semiconductor pixel sensor202412,113,086Apparatus and methods for sensing long wavelength light202412,088,940Semiconductor device and method of manufacture202412,081,866Image sensor including light shielding layer and patterned dielectric layer202412,068,246Redistribution layer layouts on integrated circuits and methods for manufacturing the same202412,051,704Pixel array including octagon pixel sensors202412,046,528Heat dissipation structures202412,033,902Mid-manufacturing semiconductor wafer layer testing202412,021,054Redistribution layer (RDL) layouts for integrated circuits202412,021,105Pixel array including octagon pixel sensors202411,996,428Optical blocking structures for black level correction pixels in an image sensor202411,985,438Pixel array including dark pixel sensors202411,956,553Image sensor for sensing LED light with reduced flickering202411,843,013Polarizers for image sensor devices202311,837,614Fast charge transfer floating diffusion region for a photodetector and methods of forming the same202311,837,619Semiconductor arrangement with isolation structure202311,824,073Image sensor device202311,810,933Image sensor device and fabrication method thereof202311,810,936Pixel array including air gap reflection structures202311,798,969Apparatus and methods for sensing long wavelength light202311,791,299Redistribution layer (RDL) layouts for integrated circuits202311,791,358Method of forming semiconductor device202311,769,780Image sensors with stress adjusting layers202311,736,831Semiconductor device and method of manufacture202311,735,619Semiconductor image sensor device having back side illuminated image sensors with embedded color filters202311,735,618Stacked grid design for improved optical performance and isolation202311,728,364Low-refractivity grid structure and method forming same202311,728,365Semiconductor device with a radiation sensing region and method for forming the same202311,706,525Image sensor including light shielding layer and patterned dielectric layer202311,670,651Pixel array including octagon pixel sensors202311,670,562Heat dissipation structures202311,652,124Isolation structure having an air gap to reduce pixel crosstalk202311,626,435Image sensor202311,581,352Increased optical path for long wavelength light by grating structure202311,569,289Image sensor having stress releasing structure and method of forming same202311,569,288Image sensor having stress releasing structure and method of forming same202311,527,563Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same202211,521,997Multi-protrusion transfer gate structure202211,495,632Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters202211,482,506Edge-trimming methods for wafer bonding and dicing202211,367,745Apparatus and methods for sensing long wavelength light202211,355,545Semiconductor image sensor device having back side illuminated image sensors with embedded color filters202211,302,738Image sensor with improved quantum efficiency surface structure202211,302,730Polarizers for image sensor devices202211,258,971Multi-function transfer gate electrode for a photodetector and methods of operating the same202211,233,082Formation method of light sensing device202211,227,886Mechanisms for forming image sensor device202211,195,867High dielectric constant dielectric layer forming method, image sensor device, and manufacturing method thereof202111,189,653Semiconductor device with buffer layer and method of forming202111,189,657Image sensor with improved quantum efficiency surface structure202111,177,306Support structure for integrated circuitry202111,177,309Image sensor with pad structure202111,177,304Method for forming light-sensing device202111,177,305Method for fabricating image sensor202111,164,902Image sensor having isolation structure202111,140,309Image sensor including light shielding layer and patterned dielectric layer2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (91)· patent assignee history
2021–2026Based in TW· patent location history
2026Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 91 | 2021–2026 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 92 | 2021–2026 |